Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source

Alexios Papadimitratos; Aram Amassian; Aravind S. Killampalli; Jared L. MacK; George G. Malliaras; James R. Engstrom

doi:10.1007/s00339-008-5025-x

Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source

Alexios Papadimitratos, Aram Amassian, Aravind S. Killampalli, Jared L. MacK, George G. Malliaras, James R. Engstrom

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Abstract

Top-contact organic thin-film transistors (OTFTs) of pentacene have been fabricated on bare SiO₂ and SiO₂ modified with hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). The pentacene films were deposited from a supersonic molecular beam source with kinetic energy of incident molecules ranging from 1.5 to 6.7 eV. The field-effect mobility of OTFTs was found to increase systematically with increasing kinetic energy of the molecular beam. The improvements are more important on HMDS- and OTS-treated surfaces than on bare SiO₂. Tapping mode atomic force microscopy images reveal that pentacene thin films deposited at high kinetic energy form with significantly larger grains-independent of surface treatment-than films deposited using low-energy beams.

Original language	English (US)
Pages (from-to)	29-35
Number of pages	7
Journal	Applied Physics A: Materials Science and Processing
Volume	95
Issue number	1
DOIs	https://doi.org/10.1007/s00339-008-5025-x
State	Published - Apr 2009

ASJC Scopus subject areas

General Chemistry
General Materials Science

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title = "Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source",

abstract = "Top-contact organic thin-film transistors (OTFTs) of pentacene have been fabricated on bare SiO2 and SiO2 modified with hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). The pentacene films were deposited from a supersonic molecular beam source with kinetic energy of incident molecules ranging from 1.5 to 6.7 eV. The field-effect mobility of OTFTs was found to increase systematically with increasing kinetic energy of the molecular beam. The improvements are more important on HMDS- and OTS-treated surfaces than on bare SiO2. Tapping mode atomic force microscopy images reveal that pentacene thin films deposited at high kinetic energy form with significantly larger grains-independent of surface treatment-than films deposited using low-energy beams.",

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T1 - Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source

AU - Papadimitratos, Alexios

AU - Amassian, Aram

AU - Killampalli, Aravind S.

AU - MacK, Jared L.

AU - Malliaras, George G.

AU - Engstrom, James R.

PY - 2009/4

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N2 - Top-contact organic thin-film transistors (OTFTs) of pentacene have been fabricated on bare SiO2 and SiO2 modified with hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). The pentacene films were deposited from a supersonic molecular beam source with kinetic energy of incident molecules ranging from 1.5 to 6.7 eV. The field-effect mobility of OTFTs was found to increase systematically with increasing kinetic energy of the molecular beam. The improvements are more important on HMDS- and OTS-treated surfaces than on bare SiO2. Tapping mode atomic force microscopy images reveal that pentacene thin films deposited at high kinetic energy form with significantly larger grains-independent of surface treatment-than films deposited using low-energy beams.

AB - Top-contact organic thin-film transistors (OTFTs) of pentacene have been fabricated on bare SiO2 and SiO2 modified with hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). The pentacene films were deposited from a supersonic molecular beam source with kinetic energy of incident molecules ranging from 1.5 to 6.7 eV. The field-effect mobility of OTFTs was found to increase systematically with increasing kinetic energy of the molecular beam. The improvements are more important on HMDS- and OTS-treated surfaces than on bare SiO2. Tapping mode atomic force microscopy images reveal that pentacene thin films deposited at high kinetic energy form with significantly larger grains-independent of surface treatment-than films deposited using low-energy beams.

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Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source

Abstract

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