Organic light-emitting diodes (LEDs) based on Langmuir-Blodgett films containing rare-earth complexes

M. S. Weaver, D. G. Lidzey, M. A. Pavier, H. Mellor, S. L. Thorpe, D. D.C. Bradley, T. Richardson, T. M. Searle, C. H. Huang, H. Lui, D. Zhou

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20 Scopus citations


In this paper we report the construction of an organic light-emitting diode (LED) containing a rare-earth molecular complex that was deposited as a Langmuir-Blodgett (LB) film. The complex is a donor-conjugated π-electron system acceptor (D-π-A) molecular cation coupled to a monovalent anion containing a trivalent rare-earth (Nd3+) cation surrounded by four organic singly charged anionic ligands. Devices were fabricated by LB deposition of multilayer films onto an indium-tin oxide (ITO)-coated glas1s substrate on top of which aluminium was evaporated to form the diode structure. Such devices are found to electroluminesce when subjected to a forward bias of a few volts. We present here the electrical and optical characteristics of the device.
Original languageEnglish (US)
JournalSynthetic Metals
Issue number1-3
StatePublished - Jan 1 1996
Externally publishedYes

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