Opto-electronic properties of MBE-grown ZnSSe thin films on ITO substrates

D. Shen; S. Y. Au; X. X. Zhang; I. K. Sou; G. Han; D. Que

doi:10.1080/01468030303826

Opto-electronic properties of MBE-grown ZnSSe thin films on ITO substrates

D. Shen, S. Y. Au, X. X. Zhang, I. K. Sou^*, G. Han, D. Que

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The opto-electronic properties of molecular-beam epitaxy (MBE)-grown ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. Ultra-violet (UV) photoresponsivity as high as 0.01 A/W and three orders of visible rejection power were demonstrated. The results of d.c. resistivity measurements revealed that the resistivity of the ZnSSe thin films decreased as the crystal size increases and reaches a value of 4.3 × 10¹¹ Ω cm for a thin film grown at the optimized substrate temperature of 290°C. The results of a.c. impedance measurements performed in the frequency range of 40 to 4000 Hz further indicated that the impedance of this alloy thin film can provide a good match with the liquid crystal layer of a liquid crystal light valve for UV imaging applications.

Original language	English (US)
Pages (from-to)	25-33
Number of pages	9
Journal	Fiber and Integrated Optics
Volume	22
Issue number	1
DOIs	https://doi.org/10.1080/01468030303826
State	Published - 2003
Externally published	Yes

Keywords

MBE
Opto-electronic properties
ZhSSe/ITO thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1080/01468030303826

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title = "Opto-electronic properties of MBE-grown ZnSSe thin films on ITO substrates",

abstract = "The opto-electronic properties of molecular-beam epitaxy (MBE)-grown ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. Ultra-violet (UV) photoresponsivity as high as 0.01 A/W and three orders of visible rejection power were demonstrated. The results of d.c. resistivity measurements revealed that the resistivity of the ZnSSe thin films decreased as the crystal size increases and reaches a value of 4.3 × 1011 Ω cm for a thin film grown at the optimized substrate temperature of 290°C. The results of a.c. impedance measurements performed in the frequency range of 40 to 4000 Hz further indicated that the impedance of this alloy thin film can provide a good match with the liquid crystal layer of a liquid crystal light valve for UV imaging applications.",

keywords = "MBE, Opto-electronic properties, ZhSSe/ITO thin films",

author = "D. Shen and Au, {S. Y.} and Zhang, {X. X.} and Sou, {I. K.} and G. Han and D. Que",

year = "2003",

doi = "10.1080/01468030303826",

language = "English (US)",

volume = "22",

pages = "25--33",

journal = "Fiber and Integrated Optics",

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TY - JOUR

T1 - Opto-electronic properties of MBE-grown ZnSSe thin films on ITO substrates

AU - Shen, D.

AU - Au, S. Y.

AU - Zhang, X. X.

AU - Sou, I. K.

AU - Han, G.

AU - Que, D.

PY - 2003

Y1 - 2003

N2 - The opto-electronic properties of molecular-beam epitaxy (MBE)-grown ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. Ultra-violet (UV) photoresponsivity as high as 0.01 A/W and three orders of visible rejection power were demonstrated. The results of d.c. resistivity measurements revealed that the resistivity of the ZnSSe thin films decreased as the crystal size increases and reaches a value of 4.3 × 1011 Ω cm for a thin film grown at the optimized substrate temperature of 290°C. The results of a.c. impedance measurements performed in the frequency range of 40 to 4000 Hz further indicated that the impedance of this alloy thin film can provide a good match with the liquid crystal layer of a liquid crystal light valve for UV imaging applications.

AB - The opto-electronic properties of molecular-beam epitaxy (MBE)-grown ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. Ultra-violet (UV) photoresponsivity as high as 0.01 A/W and three orders of visible rejection power were demonstrated. The results of d.c. resistivity measurements revealed that the resistivity of the ZnSSe thin films decreased as the crystal size increases and reaches a value of 4.3 × 1011 Ω cm for a thin film grown at the optimized substrate temperature of 290°C. The results of a.c. impedance measurements performed in the frequency range of 40 to 4000 Hz further indicated that the impedance of this alloy thin film can provide a good match with the liquid crystal layer of a liquid crystal light valve for UV imaging applications.

KW - MBE

KW - Opto-electronic properties

KW - ZhSSe/ITO thin films

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DO - 10.1080/01468030303826

M3 - Article

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SN - 0146-8030

VL - 22

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EP - 33

JO - Fiber and Integrated Optics

JF - Fiber and Integrated Optics

IS - 1

ER -

Opto-electronic properties of MBE-grown ZnSSe thin films on ITO substrates

Abstract

Keywords

ASJC Scopus subject areas

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