Opto-electronic properties of MBE-grown ZnSSe thin films on ITO substrates

D. Shen, S. Y. Au, Xixiang Zhang, I. K. Sou*, G. Han, D. Que

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The opto-electronic properties of molecular-beam epitaxy (MBE)-grown ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. Ultra-violet (UV) photoresponsivity as high as 0.01 A/W and three orders of visible rejection power were demonstrated. The results of d.c. resistivity measurements revealed that the resistivity of the ZnSSe thin films decreased as the crystal size increases and reaches a value of 4.3 × 1011 Ω cm for a thin film grown at the optimized substrate temperature of 290°C. The results of a.c. impedance measurements performed in the frequency range of 40 to 4000 Hz further indicated that the impedance of this alloy thin film can provide a good match with the liquid crystal layer of a liquid crystal light valve for UV imaging applications.

Original languageEnglish (US)
Pages (from-to)25-33
Number of pages9
JournalFiber and Integrated Optics
Issue number1
StatePublished - Nov 17 2003


  • MBE
  • Opto-electronic properties
  • ZhSSe/ITO thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


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