Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs with High Wall-Plug Efficiency

Yimeng Sang, Zhe Zhuang*, Kun Xing*, Zhuoying Jiang, Chenxue Li, Feifan Xu, Dongqi Zhang, Junchi Yu, Jianguo Zhao, Ting Zhi, Tao Tao, Cheng Li, Kai Huang, Kazuhiro Ohkawa, Rong Zhang, Bin Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


This study demonstrated InGaN-based amber micro-light-emitting diodes ( $\mu $ LEDs) with varying Al contents of 2%, 5%, and 16% in barriers. The $\mu $ LEDs with Al $_{\mathbf {{0}.{05}}}$ GaN in barriers exhibited the highest on-wafer wall-plug efficiency due to the good material quality and optimal energy band engineering for carrier injection. We fabricated $\mu $ LEDs with diameters ranging from 60 to $10~\mu \text{m}$ using the optimal epi-structure. The forward voltage was 2.15 V at 1 A/cm $^{\mathbf {{2}}}$ , a significantly lower value compared to others. The external quantum efficiency and wall-plug efficiency of the packaged $\mu $ LEDs with a diameter of $10 ~\mu \text{m}$ are 4.8% and 4% at 1 A/cm $^{\mathbf {{2}}}$ , respectively. The slight decrease in efficiency of 10- $\mu \text{m} \mu $ LEDs can be attributed to the sidewall effect, which was confirmed by photoluminescent and lifetime mapping.

Original languageEnglish (US)
Pages (from-to)76-79
Number of pages4
JournalIEEE Electron Device Letters
Issue number1
StatePublished - Jan 1 2024

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.


  • Al content in barriers
  • amber micro-light-emitting diode
  • InGaN
  • wall-plug efficiency

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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