Abstract
Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g. © 2011 Elsevier Ltd. All rights reserved.
Original language | English (US) |
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Pages (from-to) | 89-93 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 63 |
Issue number | 1 |
DOIs | |
State | Published - Sep 2011 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: The authors would like to thank to NSF phase I SBIR and the Texas Emerging Technology Found for partial financial support and the Army Research Laboratories for their assistance in dry etch process.
ASJC Scopus subject areas
- Materials Chemistry
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Condensed Matter Physics