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Optimization of GaAs ECR etching in chemically assisted ion beam process using Cl
2
/Ar plasma
S. F. Yoon
*
,
T. K. Ng
, H. Q. Zheng
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Scopus citations
Overview
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Dive into the research topics of 'Optimization of GaAs ECR etching in chemically assisted ion beam process using Cl
2
/Ar plasma'. Together they form a unique fingerprint.
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Engineering
Ar Plasma
100%
Side Wall
100%
Gallium Arsenide
100%
Cyclotron Resonance
100%
Flow Rate
60%
Etch Rate
40%
Smooth Surface
40%
Process Pressure
20%
Root Mean Square
20%
Direction Perpendicular
20%
Gaas Substrate
20%
Surface Morphology
20%
Earth and Planetary Sciences
Flow Velocity
100%
Ion Beam
100%
Electron Cyclotron Resonance
100%
Surface Roughness
33%
Plasma Etching
33%
Physics
Ion Beams
100%
Electron Cyclotron Resonance
100%
Flow Velocity
100%
Surface Roughness
33%
Plasma Etching
33%
Material Science
Gallium Arsenide
100%
Surface Roughness
25%
Surface Morphology
25%
Plasma Etching
25%
Medicine and Dentistry
Pirenzepine
100%
Keyphrases
Present Circumstance
33%