TY - GEN
T1 - Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure
AU - Sun, Jian
AU - Kosel, Jürgen
AU - Gooneratne, Chinthaka Pasan
AU - Soh, Yeongah
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2010/11
Y1 - 2010/11
N2 - The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.
AB - The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.
UR - http://hdl.handle.net/10754/564316
UR - https://ieeexplore.ieee.org/document/5690566/
UR - http://www.scopus.com/inward/record.url?scp=79951914706&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2010.5690566
DO - 10.1109/ICSENS.2010.5690566
M3 - Conference contribution
SN - 9781424481682
SP - 1329
EP - 1332
BT - 2010 IEEE Sensors
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -