Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Zhe Zhuang, Daisuke Iida, Pavel Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa

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Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10−4 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN. Application of the double ITO layers on amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO by e-beam evaporation.
Original languageEnglish (US)
Pages (from-to)12311
JournalOptics Express
Issue number8
StatePublished - Mar 26 2020

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