Optically pumped low-threshold UV lasers

Xiao Hang Li; Theeradetch Detchprohm; Yuh Shiuan Liu; Russell D. Dupuis; Tsung Ting Kao; Saniul Haq; Shyh Chiang Shen; Karan Mehta; P. Douglas Yoder; Shuo Wang; Yong O. Wei; Hongen Xie; Alec M. Fischer; Fernando A. Ponce; Tim Wernicke; Christoph Reich; Martin Martens; Michael Kneissl

doi:10.1109/PHOSST.2015.7248226

Optically pumped low-threshold UV lasers

Xiao Hang Li, Theeradetch Detchprohm, Yuh Shiuan Liu, Russell D. Dupuis, Tsung Ting Kao, Saniul Haq, Shyh Chiang Shen, Karan Mehta, P. Douglas Yoder, Shuo Wang, Yong O. Wei, Hongen Xie, Alec M. Fischer, Fernando A. Ponce, Tim Wernicke, Christoph Reich, Martin Martens, Michael Kneissl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Recently, low-threshold optically-pumped DUV lasers containing AlGaN-based multiple-quantum wells (MQWs) have been demonstrated by homoepitaxial growth on c-plane bulk AlN substrates [1-5]. The bulk AlN substrates were used in these studies due to low-dislocation density and reduction of the lattice mismatch and thermal expansion difference between the AlN substrate and Al-rich AlGaN epitaxial layers, thus leading to high-quality active regions with relatively low-dislocation density. However, because of high cost, smaller area, and impurity absorption of the bulk AlN substrates today, it is much more desirable to grow DUV lasers on the vastly available and lower-cost sapphire substrates.

Original language	English (US)
Title of host publication	2015 IEEE Summer Topicals Meeting Series, SUM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	119-120
Number of pages	2
ISBN (Electronic)	9781479974689
DOIs	https://doi.org/10.1109/PHOSST.2015.7248226
State	Published - Sep 9 2015
Externally published	Yes
Event	IEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas Duration: Jul 13 2015 → Jul 15 2015

Publication series

Name	2015 IEEE Summer Topicals Meeting Series, SUM 2015

Other

Other	IEEE Summer Topicals Meeting Series, SUM 2015
Country/Territory	Bahamas
City	Nassau
Period	07/13/15 → 07/15/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Computer Networks and Communications
Signal Processing

Access to Document

10.1109/PHOSST.2015.7248226

Cite this

Li, X. H., Detchprohm, T., Liu, Y. S., Dupuis, R. D., Kao, T. T., Haq, S., Shen, S. C., Mehta, K., Yoder, P. D., Wang, S., Wei, Y. O., Xie, H., Fischer, A. M., Ponce, F. A., Wernicke, T., Reich, C., Martens, M., & Kneissl, M. (2015). Optically pumped low-threshold UV lasers. In 2015 IEEE Summer Topicals Meeting Series, SUM 2015 (pp. 119-120). Article 7248226 (2015 IEEE Summer Topicals Meeting Series, SUM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2015.7248226

@inproceedings{2c7037505fb54b329d058e17e0c30959,

title = "Optically pumped low-threshold UV lasers",

abstract = "Recently, low-threshold optically-pumped DUV lasers containing AlGaN-based multiple-quantum wells (MQWs) have been demonstrated by homoepitaxial growth on c-plane bulk AlN substrates [1-5]. The bulk AlN substrates were used in these studies due to low-dislocation density and reduction of the lattice mismatch and thermal expansion difference between the AlN substrate and Al-rich AlGaN epitaxial layers, thus leading to high-quality active regions with relatively low-dislocation density. However, because of high cost, smaller area, and impurity absorption of the bulk AlN substrates today, it is much more desirable to grow DUV lasers on the vastly available and lower-cost sapphire substrates.",

author = "Li, {Xiao Hang} and Theeradetch Detchprohm and Liu, {Yuh Shiuan} and Dupuis, {Russell D.} and Kao, {Tsung Ting} and Saniul Haq and Shen, {Shyh Chiang} and Karan Mehta and Yoder, {P. Douglas} and Shuo Wang and Wei, {Yong O.} and Hongen Xie and Fischer, {Alec M.} and Ponce, {Fernando A.} and Tim Wernicke and Christoph Reich and Martin Martens and Michael Kneissl",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Summer Topicals Meeting Series, SUM 2015 ; Conference date: 13-07-2015 Through 15-07-2015",

year = "2015",

month = sep,

day = "9",

doi = "10.1109/PHOSST.2015.7248226",

language = "English (US)",

series = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "119--120",

booktitle = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",

address = "United States",

}

Li, XH, Detchprohm, T, Liu, YS, Dupuis, RD, Kao, TT, Haq, S, Shen, SC, Mehta, K, Yoder, PD, Wang, S, Wei, YO, Xie, H, Fischer, AM, Ponce, FA, Wernicke, T, Reich, C, Martens, M & Kneissl, M 2015, Optically pumped low-threshold UV lasers. in 2015 IEEE Summer Topicals Meeting Series, SUM 2015., 7248226, 2015 IEEE Summer Topicals Meeting Series, SUM 2015, Institute of Electrical and Electronics Engineers Inc., pp. 119-120, IEEE Summer Topicals Meeting Series, SUM 2015, Nassau, Bahamas, 07/13/15. https://doi.org/10.1109/PHOSST.2015.7248226

Optically pumped low-threshold UV lasers. / Li, Xiao Hang; Detchprohm, Theeradetch; Liu, Yuh Shiuan et al.
2015 IEEE Summer Topicals Meeting Series, SUM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 119-120 7248226 (2015 IEEE Summer Topicals Meeting Series, SUM 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optically pumped low-threshold UV lasers

AU - Li, Xiao Hang

AU - Detchprohm, Theeradetch

AU - Liu, Yuh Shiuan

AU - Dupuis, Russell D.

AU - Kao, Tsung Ting

AU - Haq, Saniul

AU - Shen, Shyh Chiang

AU - Mehta, Karan

AU - Yoder, P. Douglas

AU - Wang, Shuo

AU - Wei, Yong O.

AU - Xie, Hongen

AU - Fischer, Alec M.

AU - Ponce, Fernando A.

AU - Wernicke, Tim

AU - Reich, Christoph

AU - Martens, Martin

AU - Kneissl, Michael

PY - 2015/9/9

Y1 - 2015/9/9

N2 - Recently, low-threshold optically-pumped DUV lasers containing AlGaN-based multiple-quantum wells (MQWs) have been demonstrated by homoepitaxial growth on c-plane bulk AlN substrates [1-5]. The bulk AlN substrates were used in these studies due to low-dislocation density and reduction of the lattice mismatch and thermal expansion difference between the AlN substrate and Al-rich AlGaN epitaxial layers, thus leading to high-quality active regions with relatively low-dislocation density. However, because of high cost, smaller area, and impurity absorption of the bulk AlN substrates today, it is much more desirable to grow DUV lasers on the vastly available and lower-cost sapphire substrates.

AB - Recently, low-threshold optically-pumped DUV lasers containing AlGaN-based multiple-quantum wells (MQWs) have been demonstrated by homoepitaxial growth on c-plane bulk AlN substrates [1-5]. The bulk AlN substrates were used in these studies due to low-dislocation density and reduction of the lattice mismatch and thermal expansion difference between the AlN substrate and Al-rich AlGaN epitaxial layers, thus leading to high-quality active regions with relatively low-dislocation density. However, because of high cost, smaller area, and impurity absorption of the bulk AlN substrates today, it is much more desirable to grow DUV lasers on the vastly available and lower-cost sapphire substrates.

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T3 - 2015 IEEE Summer Topicals Meeting Series, SUM 2015

SP - 119

EP - 120

BT - 2015 IEEE Summer Topicals Meeting Series, SUM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Summer Topicals Meeting Series, SUM 2015

Y2 - 13 July 2015 through 15 July 2015

ER -

Optically pumped low-threshold UV lasers

Abstract

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