Optically pumped low-threshold UV lasers

Xiao Hang Li, Theeradetch Detchprohm, Yuh Shiuan Liu, Russell D. Dupuis, Tsung Ting Kao, Saniul Haq, Shyh Chiang Shen, Karan Mehta, P. Douglas Yoder, Shuo Wang, Yong O. Wei, Hongen Xie, Alec M. Fischer, Fernando A. Ponce, Tim Wernicke, Christoph Reich, Martin Martens, Michael Kneissl

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Recently, low-threshold optically-pumped DUV lasers containing AlGaN-based multiple-quantum wells (MQWs) have been demonstrated by homoepitaxial growth on c-plane bulk AlN substrates [1-5]. The bulk AlN substrates were used in these studies due to low-dislocation density and reduction of the lattice mismatch and thermal expansion difference between the AlN substrate and Al-rich AlGaN epitaxial layers, thus leading to high-quality active regions with relatively low-dislocation density. However, because of high cost, smaller area, and impurity absorption of the bulk AlN substrates today, it is much more desirable to grow DUV lasers on the vastly available and lower-cost sapphire substrates.

Original languageEnglish (US)
Title of host publication2015 IEEE Summer Topicals Meeting Series, SUM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9781479974689
StatePublished - Sep 9 2015
Externally publishedYes
EventIEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas
Duration: Jul 13 2015Jul 15 2015

Publication series

Name2015 IEEE Summer Topicals Meeting Series, SUM 2015


OtherIEEE Summer Topicals Meeting Series, SUM 2015

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications
  • Signal Processing


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