Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Yuh Shiuan Liu; Tsung Ting Kao; Md Mahbub Satter; Zachary Lochner; Xiao Hang Li; Shyh Chiang Shen; P. Douglas Yoder; Theeradetch Detchprohm; Russell D. Dupuis; Yong Wei; Hongen Xie; Alec Fischer; Fernando A. Ponce

doi:10.1117/12.2036835

Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Yuh Shiuan Liu, Tsung Ting Kao, Md Mahbub Satter, Zachary Lochner, Xiao Hang Li, Shyh Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando A. Ponce

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A 245.3 nm deep ultraviolet optically pumped AlGaN based multiple-quantum-well laser operating at room temperature is described. Epitaxial growth was performed by metalorganic chemical vapor deposition on a c-plane bulk AlN substrate at a growth temperature of ∼ 1130 °C. The wafer was fabricated into cleaved bars with a cavity length of ∼1.45 mm and the lasing threshold was determined to be 297 kW/cm² under pulsed 193 nm ArF excimer laser excitation. A further ∼20% reduction in threshold pumping power density was observed with six pairs of SiO₂/HfO ₂ distributed Bragg reflector deposited at the rear side of facets.

Original language	English (US)
Title of host publication	Novel In-Plane Semiconductor Lasers XIII
Publisher	SPIE
ISBN (Print)	9780819499158
DOIs	https://doi.org/10.1117/12.2036835
State	Published - 2014
Externally published	Yes
Event	Novel In-Plane Semiconductor Lasers XIII - San Francisco, CA, United States Duration: Feb 3 2014 → Feb 6 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9002
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Novel In-Plane Semiconductor Lasers XIII
Country/Territory	United States
City	San Francisco, CA
Period	02/3/14 → 02/6/14

Keywords

III-V semiconductors
Metalorganic chemical vapor deposition
deep ultraviolet
lasers
optical pumping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2036835

Cite this

Liu, Y. S., Kao, T. T., Satter, M. M., Lochner, Z., Li, X. H., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A., & Ponce, F. A. (2014). Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. In Novel In-Plane Semiconductor Lasers XIII Article 90020H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9002). SPIE. https://doi.org/10.1117/12.2036835

@inproceedings{6a6dada73dcb49e89566b81a89d72e58,

title = "Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition",

abstract = "A 245.3 nm deep ultraviolet optically pumped AlGaN based multiple-quantum-well laser operating at room temperature is described. Epitaxial growth was performed by metalorganic chemical vapor deposition on a c-plane bulk AlN substrate at a growth temperature of ∼ 1130 °C. The wafer was fabricated into cleaved bars with a cavity length of ∼1.45 mm and the lasing threshold was determined to be 297 kW/cm2 under pulsed 193 nm ArF excimer laser excitation. A further ∼20% reduction in threshold pumping power density was observed with six pairs of SiO2/HfO 2 distributed Bragg reflector deposited at the rear side of facets.",

keywords = "III-V semiconductors, Metalorganic chemical vapor deposition, deep ultraviolet, lasers, optical pumping",

author = "Liu, {Yuh Shiuan} and Kao, {Tsung Ting} and Satter, {Md Mahbub} and Zachary Lochner and Li, {Xiao Hang} and Shen, {Shyh Chiang} and Yoder, {P. Douglas} and Theeradetch Detchprohm and Dupuis, {Russell D.} and Yong Wei and Hongen Xie and Alec Fischer and Ponce, {Fernando A.}",

year = "2014",

doi = "10.1117/12.2036835",

language = "English (US)",

isbn = "9780819499158",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

booktitle = "Novel In-Plane Semiconductor Lasers XIII",

note = "Novel In-Plane Semiconductor Lasers XIII ; Conference date: 03-02-2014 Through 06-02-2014",

}

Liu, YS, Kao, TT, Satter, MM, Lochner, Z, Li, XH, Shen, SC, Yoder, PD, Detchprohm, T, Dupuis, RD, Wei, Y, Xie, H, Fischer, A & Ponce, FA 2014, Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. in Novel In-Plane Semiconductor Lasers XIII., 90020H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9002, SPIE, Novel In-Plane Semiconductor Lasers XIII, San Francisco, CA, United States, 02/3/14. https://doi.org/10.1117/12.2036835

Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. / Liu, Yuh Shiuan; Kao, Tsung Ting; Satter, Md Mahbub et al.
Novel In-Plane Semiconductor Lasers XIII. SPIE, 2014. 90020H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

AU - Liu, Yuh Shiuan

AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Lochner, Zachary

AU - Li, Xiao Hang

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

AU - Wei, Yong

AU - Xie, Hongen

AU - Fischer, Alec

AU - Ponce, Fernando A.

PY - 2014

Y1 - 2014

N2 - A 245.3 nm deep ultraviolet optically pumped AlGaN based multiple-quantum-well laser operating at room temperature is described. Epitaxial growth was performed by metalorganic chemical vapor deposition on a c-plane bulk AlN substrate at a growth temperature of ∼ 1130 °C. The wafer was fabricated into cleaved bars with a cavity length of ∼1.45 mm and the lasing threshold was determined to be 297 kW/cm2 under pulsed 193 nm ArF excimer laser excitation. A further ∼20% reduction in threshold pumping power density was observed with six pairs of SiO2/HfO 2 distributed Bragg reflector deposited at the rear side of facets.

AB - A 245.3 nm deep ultraviolet optically pumped AlGaN based multiple-quantum-well laser operating at room temperature is described. Epitaxial growth was performed by metalorganic chemical vapor deposition on a c-plane bulk AlN substrate at a growth temperature of ∼ 1130 °C. The wafer was fabricated into cleaved bars with a cavity length of ∼1.45 mm and the lasing threshold was determined to be 297 kW/cm2 under pulsed 193 nm ArF excimer laser excitation. A further ∼20% reduction in threshold pumping power density was observed with six pairs of SiO2/HfO 2 distributed Bragg reflector deposited at the rear side of facets.

KW - III-V semiconductors

KW - Metalorganic chemical vapor deposition

KW - deep ultraviolet

KW - lasers

KW - optical pumping

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SN - 9780819499158

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Novel In-Plane Semiconductor Lasers XIII

PB - SPIE

T2 - Novel In-Plane Semiconductor Lasers XIII

Y2 - 3 February 2014 through 6 February 2014

ER -

Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Abstract

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Keywords

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