We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.
|Original language||English (US)|
|Journal||Accepted by IEEE Transactions on Electron Devices|
|State||Published - 2021|
Bibliographical noteKAUST Repository Item: Exported on 2021-02-19
Acknowledged KAUST grant number(s): ORS-2016-CRG5-2996
Acknowledgements: The work was supported by KAUST with a funding ORS-2016-CRG5-2996 and City University of Hong Kong.