Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures

Fei Xue; Xin He; Dharmaraj Periyanagounder; Zhigang Ji; Lain-Jong Li; Jr-Hau He; Xixiang Zhang

Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures

Fei Xue, Xin He, Dharmaraj Periyanagounder, Zhigang Ji, Lain-Jong Li, Jr-Hau He, Xixiang Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.

Original language	English (US)
Journal	Accepted by IEEE Transactions on Electron Devices
State	Published - 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-02-19
Acknowledged KAUST grant number(s): ORS-2016-CRG5-2996
Acknowledgements: The work was supported by KAUST with a funding ORS-2016-CRG5-2996 and City University of Hong Kong.

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@article{30607a70b4bb4978aff58a325e2e3175,

title = "Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures",

abstract = "We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.",

author = "Fei Xue and Xin He and Dharmaraj Periyanagounder and Zhigang Ji and Lain-Jong Li and Jr-Hau He and Xixiang Zhang",

note = "KAUST Repository Item: Exported on 2021-02-19 Acknowledged KAUST grant number(s): ORS-2016-CRG5-2996 Acknowledgements: The work was supported by KAUST with a funding ORS-2016-CRG5-2996 and City University of Hong Kong.",

year = "2021",

language = "English (US)",

journal = "Accepted by IEEE Transactions on Electron Devices",

}

TY - JOUR

T1 - Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures

AU - Xue, Fei

AU - He, Xin

AU - Periyanagounder, Dharmaraj

AU - Ji, Zhigang

AU - Li, Lain-Jong

AU - He, Jr-Hau

AU - Zhang, Xixiang

N1 - KAUST Repository Item: Exported on 2021-02-19 Acknowledged KAUST grant number(s): ORS-2016-CRG5-2996 Acknowledgements: The work was supported by KAUST with a funding ORS-2016-CRG5-2996 and City University of Hong Kong.

PY - 2021

Y1 - 2021

N2 - We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.

AB - We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.

UR - http://hdl.handle.net/10754/667493

M3 - Article

JO - Accepted by IEEE Transactions on Electron Devices

JF - Accepted by IEEE Transactions on Electron Devices

ER -

Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures

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