Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires

J. Greil, S. Assali, Y. Isono, Abderrezak Belabbes, F. Bechstedt, F. O. Valega Mackenzie, A. Yu. Silov, E. P. A. M. Bakkers, J. E. M. Haverkort

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.
Original languageEnglish (US)
Pages (from-to)3703-3709
Number of pages7
JournalNano Letters
Issue number6
StatePublished - May 13 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: J.G. acknowledges funding by the Austrian Science Fund
(FWF): Proj. No. J3540-N30. This work was supported by the
Dutch Organization for Scientific Research (NWO-VICI


Dive into the research topics of 'Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires'. Together they form a unique fingerprint.

Cite this