TY - JOUR
T1 - Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires
AU - Greil, J.
AU - Assali, S.
AU - Isono, Y.
AU - Belabbes, Abderrezak
AU - Bechstedt, F.
AU - Valega Mackenzie, F. O.
AU - Silov, A. Yu.
AU - Bakkers, E. P. A. M.
AU - Haverkort, J. E. M.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: J.G. acknowledges funding by the Austrian Science Fund
(FWF): Proj. No. J3540-N30. This work was supported by the
Dutch Organization for Scientific Research (NWO-VICI
700.10.441).
PY - 2016/5/13
Y1 - 2016/5/13
N2 - Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.
AB - Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spectral range. Optical transitions, however, are only weakly allowed by the symmetry of the bands. While efficient luminescence has been experimentally shown, the nature of the transitions is not yet clear. Here we apply tensile strain up to 6% and investigate the evolution of the photoluminescence (PL) spectrum of WZ GaP nanowires (NWs). The pressure and polarization dependence of the emission together with a theoretical analysis of strain effects is employed to establish the nature and symmetry of the transitions. We identify the emission lines to be related to localized states with significant admixture of Γ7c symmetry and not exclusively related to the Γ8c conduction band minimum (CBM). The results emphasize the importance of strongly bound state-related emission in the pseudodirect semiconductor WZ GaP and contribute significantly to the understanding of the optoelectronic properties of this novel material.
UR - http://hdl.handle.net/10754/614818
UR - http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b01038
UR - http://www.scopus.com/inward/record.url?scp=84974528636&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.6b01038
DO - 10.1021/acs.nanolett.6b01038
M3 - Article
C2 - 27175743
SN - 1530-6984
VL - 16
SP - 3703
EP - 3709
JO - Nano Letters
JF - Nano Letters
IS - 6
ER -