Optical properties of InGaN-based red multiple quantum wells

Xin Hou, Shao-Sheng Fan, Huan Xu, Daisuke Iida, Yue-Jun Liu, Yang Mei, Guo-En Weng, Shao-Qiang Chen, Bao-Ping Zhang, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review


In this work, we present the characterization of red InGaN/GaN multiple-quantum-well (MQW) light-emitting diode structures. The optical properties of two MQW structures with different n-GaN underlayer thicknesses (4 and 8 μm) are studied and compared. The results of photoluminescence studies show that a thicker n-GaN layer is beneficial for obtaining higher In content for red MQWs. However, the sample with a thicker n-GaN layer has a poorer internal quantum efficiency, a larger full width at half maximum, and a shorter nonradiative recombination time, implying that there are stronger In-content fluctuations and more defects. Furthermore, red MQWs with higher In content are shown to exhibit more deep localized states. Our findings imply that in order to achieve high-efficiency InGaN MQWs for red emission, enhancing the uniformity of In-content distribution in the active region and decreasing nonradiative recombination centers are critical challenges.
Original languageEnglish (US)
Pages (from-to)261102
JournalApplied Physics Letters
Issue number26
StatePublished - Jun 28 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-06-29

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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