TY - JOUR
T1 - Optical properties of InGaN-based red multiple quantum wells
AU - Hou, Xin
AU - Fan, Shao-Sheng
AU - Xu, Huan
AU - Iida, Daisuke
AU - Liu, Yue-Jun
AU - Mei, Yang
AU - Weng, Guo-En
AU - Chen, Shao-Qiang
AU - Zhang, Bao-Ping
AU - Ohkawa, Kazuhiro
N1 - KAUST Repository Item: Exported on 2022-06-29
PY - 2022/6/28
Y1 - 2022/6/28
N2 - In this work, we present the characterization of red InGaN/GaN multiple-quantum-well (MQW) light-emitting diode structures. The optical properties of two MQW structures with different n-GaN underlayer thicknesses (4 and 8 μm) are studied and compared. The results of photoluminescence studies show that a thicker n-GaN layer is beneficial for obtaining higher In content for red MQWs. However, the sample with a thicker n-GaN layer has a poorer internal quantum efficiency, a larger full width at half maximum, and a shorter nonradiative recombination time, implying that there are stronger In-content fluctuations and more defects. Furthermore, red MQWs with higher In content are shown to exhibit more deep localized states. Our findings imply that in order to achieve high-efficiency InGaN MQWs for red emission, enhancing the uniformity of In-content distribution in the active region and decreasing nonradiative recombination centers are critical challenges.
AB - In this work, we present the characterization of red InGaN/GaN multiple-quantum-well (MQW) light-emitting diode structures. The optical properties of two MQW structures with different n-GaN underlayer thicknesses (4 and 8 μm) are studied and compared. The results of photoluminescence studies show that a thicker n-GaN layer is beneficial for obtaining higher In content for red MQWs. However, the sample with a thicker n-GaN layer has a poorer internal quantum efficiency, a larger full width at half maximum, and a shorter nonradiative recombination time, implying that there are stronger In-content fluctuations and more defects. Furthermore, red MQWs with higher In content are shown to exhibit more deep localized states. Our findings imply that in order to achieve high-efficiency InGaN MQWs for red emission, enhancing the uniformity of In-content distribution in the active region and decreasing nonradiative recombination centers are critical challenges.
UR - http://hdl.handle.net/10754/679429
UR - https://aip.scitation.org/doi/10.1063/5.0096155
U2 - 10.1063/5.0096155
DO - 10.1063/5.0096155
M3 - Article
SN - 0003-6951
VL - 120
SP - 261102
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 26
ER -