Optical properties of InGaAs/GaAs multi quantum wells structure grown by molecular beam epitaxy

Mohd Sharizal Alias; Mohd Fauzi Maulud; Soile Suomalainen; Mohd Razman Yahya; Abdul Fatah Awang Mat

Optical properties of InGaAs/GaAs multi quantum wells structure grown by molecular beam epitaxy

Mohd Sharizal Alias^*, Mohd Fauzi Maulud, Soile Suomalainen, Mohd Razman Yahya, Abdul Fatah Awang Mat

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Inclusive analysis on the optical characteristics of InGaAs/GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication.

Original language	English (US)
Pages (from-to)	245-248
Number of pages	4
Journal	Sains Malaysiana
Volume	37
Issue number	3
State	Published - Sep 2008
Externally published	Yes

Keywords

InGaAs, semiconductor laser
Material gain
Quantum well

ASJC Scopus subject areas

General

Cite this

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title = "Optical properties of InGaAs/GaAs multi quantum wells structure grown by molecular beam epitaxy",

abstract = "Inclusive analysis on the optical characteristics of InGaAs/GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication.",

keywords = "InGaAs, semiconductor laser, Material gain, Quantum well",

author = "Alias, {Mohd Sharizal} and Maulud, {Mohd Fauzi} and Soile Suomalainen and Yahya, {Mohd Razman} and Mat, {Abdul Fatah Awang}",

year = "2008",

month = sep,

language = "English (US)",

volume = "37",

pages = "245--248",

journal = "Sains Malaysiana",

issn = "0126-6039",

publisher = "Penerbit Universiti Kebangsaan Malaysia",

number = "3",

}

TY - JOUR

T1 - Optical properties of InGaAs/GaAs multi quantum wells structure grown by molecular beam epitaxy

AU - Alias, Mohd Sharizal

AU - Maulud, Mohd Fauzi

AU - Suomalainen, Soile

AU - Yahya, Mohd Razman

AU - Mat, Abdul Fatah Awang

PY - 2008/9

Y1 - 2008/9

N2 - Inclusive analysis on the optical characteristics of InGaAs/GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication.

AB - Inclusive analysis on the optical characteristics of InGaAs/GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication.

KW - InGaAs, semiconductor laser

KW - Material gain

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=51649107164&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:51649107164

SN - 0126-6039

VL - 37

SP - 245

EP - 248

JO - Sains Malaysiana

JF - Sains Malaysiana

IS - 3

ER -

Optical properties of InGaAs/GaAs multi quantum wells structure grown by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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