Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering

C. Chen; G. Ding; B. S. Ooi; L. F. Lester; A. Helmy; T. L. Koch; J. C.M. Hwang

doi:10.1364/OE.18.006211

Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering

C. Chen^*, G. Ding, B. S. Ooi, L. F. Lester, A. Helmy, T. L. Koch, J. C.M. Hwang

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report the optical injection modulation of semiconductor lasers by intra-cavity stimulated Raman scattering. This mechanism manifests itself as sharply enhanced modulation bandwidth in InAs/InGaA1As/InP quantum-dash lasers when the injected photons are 33 ± 3 meV more energetic than the lasing photons. Raman scattering measurements on the quantum-dash structure and rate equation models strongly support direct gain modulation by stimulated Raman scattering. We believe this new bandwidth enhancement mechanism may have important applications in optical communication and signal processing.

Original language	English (US)
Pages (from-to)	6211-6219
Number of pages	9
Journal	Optics Express
Volume	18
Issue number	6
DOIs	https://doi.org/10.1364/OE.18.006211
State	Published - Mar 15 2010

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering",

abstract = "We report the optical injection modulation of semiconductor lasers by intra-cavity stimulated Raman scattering. This mechanism manifests itself as sharply enhanced modulation bandwidth in InAs/InGaA1As/InP quantum-dash lasers when the injected photons are 33 ± 3 meV more energetic than the lasing photons. Raman scattering measurements on the quantum-dash structure and rate equation models strongly support direct gain modulation by stimulated Raman scattering. We believe this new bandwidth enhancement mechanism may have important applications in optical communication and signal processing.",

author = "C. Chen and G. Ding and Ooi, {B. S.} and Lester, {L. F.} and A. Helmy and Koch, {T. L.} and Hwang, {J. C.M.}",

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language = "English (US)",

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T1 - Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering

AU - Chen, C.

AU - Ding, G.

AU - Ooi, B. S.

AU - Lester, L. F.

AU - Helmy, A.

AU - Koch, T. L.

AU - Hwang, J. C.M.

PY - 2010/3/15

Y1 - 2010/3/15

N2 - We report the optical injection modulation of semiconductor lasers by intra-cavity stimulated Raman scattering. This mechanism manifests itself as sharply enhanced modulation bandwidth in InAs/InGaA1As/InP quantum-dash lasers when the injected photons are 33 ± 3 meV more energetic than the lasing photons. Raman scattering measurements on the quantum-dash structure and rate equation models strongly support direct gain modulation by stimulated Raman scattering. We believe this new bandwidth enhancement mechanism may have important applications in optical communication and signal processing.

AB - We report the optical injection modulation of semiconductor lasers by intra-cavity stimulated Raman scattering. This mechanism manifests itself as sharply enhanced modulation bandwidth in InAs/InGaA1As/InP quantum-dash lasers when the injected photons are 33 ± 3 meV more energetic than the lasing photons. Raman scattering measurements on the quantum-dash structure and rate equation models strongly support direct gain modulation by stimulated Raman scattering. We believe this new bandwidth enhancement mechanism may have important applications in optical communication and signal processing.

UR - http://www.scopus.com/inward/record.url?scp=77949624813&partnerID=8YFLogxK

U2 - 10.1364/OE.18.006211

DO - 10.1364/OE.18.006211

M3 - Article

C2 - 20389644

AN - SCOPUS:77949624813

SN - 1094-4087

VL - 18

SP - 6211

EP - 6219

JO - Optics Express

JF - Optics Express

IS - 6

ER -

Optical injection modulation of quantum-dash semiconductor lasers by intra-cavity stimulated Raman scattering

Abstract

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