Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate

Chao Shen, Tien Khee Ng, Bilal Janjua, Ahmed Y. Alyamani, Munir M. El-Desouki, James Speck, Steven P. Den Baars, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Segmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2 cm-1.
Original languageEnglish (US)
Title of host publicationAsia Communications and Photonics Conference 2014
PublisherThe Optical Society
ISBN (Print)9781557528520
StatePublished - 2014

Cite this