Optical and structural properties of Eu-implanted Inx Al 1-xN

I. S. Roqan, K. P. O'Donnell, R. W. Martin, C. Trager-Cowan, V. Matias, A. Vantomme, K. Lorenz, E. Alves, I. M. Watson

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Off-axis implantation of 80 keV Eu ions into epitaxial c -plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of In xAl1-xN films on GaN in the composition range near lattice matching (x∼0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In 0.13 Al0.87 N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

Original languageEnglish (US)
Article number083508
JournalJournal of Applied Physics
Issue number8
StatePublished - 2009

ASJC Scopus subject areas

  • General Physics and Astronomy


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