Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

Rami T. Elafandy; Tien Khee Ng; Yang Yang; Dong Kyu Cha; Bei Zhang; Lan Zhao; Meng Zhang; Pallab K. Bhattacharya; Boon S. Ooi

doi:10.1109/HONET.2011.6149817

Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

Rami T. Elafandy, Tien Khee Ng, Yang Yang, Dong Kyu Cha, Bei Zhang, Lan Zhao, Meng Zhang, Pallab K. Bhattacharya, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

Original language	English (US)
Title of host publication	8th International Conference on High-capacity Optical Networks and Emerging Technologies
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	201-204
Number of pages	4
ISBN (Print)	9781457711695
DOIs	https://doi.org/10.1109/HONET.2011.6149817
State	Published - Dec 2011

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KAUST Repository Item: Exported on 2020-10-01

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10.1109/HONET.2011.6149817

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Elafandy, R. T., Ng, T. K., Yang, Y., Cha, D. K., Zhang, B., Zhao, L., Zhang, M., Bhattacharya, P. K., & Ooi, B. S. (2011). Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots. In 8th International Conference on High-capacity Optical Networks and Emerging Technologies (pp. 201-204). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/HONET.2011.6149817

@inproceedings{4b18335aae5f4509a1ccce41a5a986f8,

title = "Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots",

abstract = "Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. {\textcopyright} 2011 IEEE.",

author = "Elafandy, {Rami T.} and Ng, {Tien Khee} and Yang Yang and Cha, {Dong Kyu} and Bei Zhang and Lan Zhao and Meng Zhang and Bhattacharya, {Pallab K.} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2011",

month = dec,

doi = "10.1109/HONET.2011.6149817",

language = "English (US)",

isbn = "9781457711695",

pages = "201--204",

booktitle = "8th International Conference on High-capacity Optical Networks and Emerging Technologies",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

Elafandy, RT, Ng, TK, Yang, Y, Cha, DK, Zhang, B, Zhao, L, Zhang, M, Bhattacharya, PK & Ooi, BS 2011, Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots. in 8th International Conference on High-capacity Optical Networks and Emerging Technologies. Institute of Electrical and Electronics Engineers (IEEE), pp. 201-204. https://doi.org/10.1109/HONET.2011.6149817

Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots. / Elafandy, Rami T.; Ng, Tien Khee; Yang, Yang et al.
8th International Conference on High-capacity Optical Networks and Emerging Technologies. Institute of Electrical and Electronics Engineers (IEEE), 2011. p. 201-204.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

AU - Elafandy, Rami T.

AU - Ng, Tien Khee

AU - Yang, Yang

AU - Cha, Dong Kyu

AU - Zhang, Bei

AU - Zhao, Lan

AU - Zhang, Meng

AU - Bhattacharya, Pallab K.

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2011/12

Y1 - 2011/12

N2 - Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

AB - Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

UR - http://hdl.handle.net/10754/564461

UR - http://ieeexplore.ieee.org/document/6149817/

UR - http://www.scopus.com/inward/record.url?scp=84863135267&partnerID=8YFLogxK

U2 - 10.1109/HONET.2011.6149817

DO - 10.1109/HONET.2011.6149817

M3 - Conference contribution

SN - 9781457711695

SP - 201

EP - 204

BT - 8th International Conference on High-capacity Optical Networks and Emerging Technologies

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

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