One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters

D. Iida; A. Miura; Y. Okadome; Y. Tsuchiya; T. Kawashima; T. Nagai; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1002/pssa.200674810

One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters

D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, T. Kawashima, T. Nagai, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

43 Scopus citations

Abstract

Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a-plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10 6 cm -2 and 10 3 cm -1, respectively. We also fabricated and characterized a-plane-GaN-based LEDs using SELO technology. The light output power of a blue-green LED was shown to monotonically increase with decreasing of threading dislocation density. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

Original language	English (US)
Title of host publication	Physica Status Solidi (A) Applications and Materials Science
Pages	2005-2009
Number of pages	5
DOIs	https://doi.org/10.1002/pssa.200674810
State	Published - Jun 1 2007
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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Iida, D., Miura, A., Okadome, Y., Tsuchiya, Y., Kawashima, T., Nagai, T., Iwaya, M., Kamiyama, S., Amano, H., & Akasaki, I. (2007). One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters. In Physica Status Solidi (A) Applications and Materials Science (pp. 2005-2009) https://doi.org/10.1002/pssa.200674810

@inproceedings{139c95b54fc6400b9faf94a97f5e6eee,

title = "One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters",

abstract = "Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a-plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10 6 cm -2 and 10 3 cm -1, respectively. We also fabricated and characterized a-plane-GaN-based LEDs using SELO technology. The light output power of a blue-green LED was shown to monotonically increase with decreasing of threading dislocation density. {\textcopyright} 2007 WILEY-VCH Verlag GmbH & Co. KGaA.",

author = "D. Iida and A. Miura and Y. Okadome and Y. Tsuchiya and T. Kawashima and T. Nagai and M. Iwaya and S. Kamiyama and H. Amano and I. Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2007",

month = jun,

day = "1",

doi = "10.1002/pssa.200674810",

language = "English (US)",

pages = "2005--2009",

booktitle = "Physica Status Solidi (A) Applications and Materials Science",

}

Iida, D, Miura, A, Okadome, Y, Tsuchiya, Y, Kawashima, T, Nagai, T, Iwaya, M, Kamiyama, S, Amano, H & Akasaki, I 2007, One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters. in Physica Status Solidi (A) Applications and Materials Science. pp. 2005-2009. https://doi.org/10.1002/pssa.200674810

TY - GEN

T1 - One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters

AU - Iida, D.

AU - Miura, A.

AU - Okadome, Y.

AU - Tsuchiya, Y.

AU - Kawashima, T.

AU - Nagai, T.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2007/6/1

Y1 - 2007/6/1

N2 - Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a-plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10 6 cm -2 and 10 3 cm -1, respectively. We also fabricated and characterized a-plane-GaN-based LEDs using SELO technology. The light output power of a blue-green LED was shown to monotonically increase with decreasing of threading dislocation density. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

AB - Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technology. Using this technology, a-plane GaN films with atomically flat surface were grown. The threading dislocation and stacking fault densities in the overgrown regions were lower than 10 6 cm -2 and 10 3 cm -1, respectively. We also fabricated and characterized a-plane-GaN-based LEDs using SELO technology. The light output power of a blue-green LED was shown to monotonically increase with decreasing of threading dislocation density. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssa.200674810

UR - http://www.scopus.com/inward/record.url?scp=34547176842&partnerID=8YFLogxK

U2 - 10.1002/pssa.200674810

DO - 10.1002/pssa.200674810

M3 - Conference contribution

SP - 2005

EP - 2009

BT - Physica Status Solidi (A) Applications and Materials Science

ER -

One-step lateral growth for reduction in defect density of a-plane GaN on r-sapphire substrate and its application in light emitters

Abstract

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ASJC Scopus subject areas

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