Abstract
The selective regrowth of GaN during sidewall-seeded epitaxial lateral overgrowth was performed. In addition to adjusting the V/III ratio, control of offset angle of the sidewall was found to be effective for realizing one-sidewall-seeded a-plane (1 1 2̄ 0) GaN on r-plane (1 1̄ 0 2) sapphire. The number of coalescence regions on the grooves was reduced, and threading-dislocation and stacking-fault densities as low as 106-107 cm-2 and 103-104 cm-1, respectively, were successfully realized. © 2009 Elsevier B.V. All rights reserved.
Original language | English (US) |
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Pages (from-to) | 2887-2890 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 311 |
Issue number | 10 |
DOIs | |
State | Published - May 1 2009 |
Externally published | Yes |
Bibliographical note
Generated from Scopus record by KAUST IRTS on 2023-09-21ASJC Scopus subject areas
- Materials Chemistry
- Inorganic Chemistry
- Condensed Matter Physics