One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

The selective regrowth of GaN during sidewall-seeded epitaxial lateral overgrowth was performed. In addition to adjusting the V/III ratio, control of offset angle of the sidewall was found to be effective for realizing one-sidewall-seeded a-plane (1 1 2̄ 0) GaN on r-plane (1 1̄ 0 2) sapphire. The number of coalescence regions on the grooves was reduced, and threading-dislocation and stacking-fault densities as low as 106-107 cm-2 and 103-104 cm-1, respectively, were successfully realized. © 2009 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)2887-2890
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number10
DOIs
StatePublished - May 1 2009
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Materials Chemistry
  • Inorganic Chemistry
  • Condensed Matter Physics

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