On the structure-property inter-relationships of metal gate electrodes for future generation CMOS

Prashant Majhi; Husam Alshareef; Huang Chun Wen; Kisik Choi; Patrick Lysaght; Craig Huffman; Hongfa Luan; Rusty Harris; Byoung Hun Lee; Chuck Ramiller

On the structure-property inter-relationships of metal gate electrodes for future generation CMOS

Prashant Majhi^*, Husam Alshareef, Huang Chun Wen, Kisik Choi, Patrick Lysaght, Craig Huffman, Hongfa Luan, Rusty Harris, Byoung Hun Lee, Chuck Ramiller

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

According to the ITRS (2004) high performance device trends will soon require high-k dielectrics with metal gate electrodes to remove poly depletion effects, achieve lower gate resistance, eliminate B penetration issues, and reduce interaction of the gate materials and the underlying high-k films. This study discusses the challenges and opportunities in identifying candidate material systems and associated processing techniques for future generation CMOS metal gates. The development of a standardized technique to accurately extract the work function of metal gates on hafnium based high-k dielectrics is forwarded. Additionally, a preliminary understanding of the structure-property inter-relationship of candidate metals is presented. The material systems include a) pure metals, b) metal nitrides, c) ternary metal nitrides, and d) alloys.

Original language	English (US)
Title of host publication	Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005
Pages	56-61
Number of pages	6
State	Published - 2005
Externally published	Yes
Event	4th International Conference on Semiconductor Technology, ISTC 2005 - Shanghai, China Duration: Mar 15 2005 → Mar 17 2005

Publication series

Name	Proceedings - Electrochemical Society
Volume	PV 2005-12

Other

Other	4th International Conference on Semiconductor Technology, ISTC 2005
Country/Territory	China
City	Shanghai
Period	03/15/05 → 03/17/05

ASJC Scopus subject areas

General Engineering

Cite this

Majhi, P., Alshareef, H., Wen, H. C., Choi, K., Lysaght, P., Huffman, C., Luan, H., Harris, R., Lee, B. H., & Ramiller, C. (2005). On the structure-property inter-relationships of metal gate electrodes for future generation CMOS. In Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005 (pp. 56-61). (Proceedings - Electrochemical Society; Vol. PV 2005-12).

@inproceedings{d5baecca76b64e298a8ecee310f05dc6,

title = "On the structure-property inter-relationships of metal gate electrodes for future generation CMOS",

abstract = "According to the ITRS (2004) high performance device trends will soon require high-k dielectrics with metal gate electrodes to remove poly depletion effects, achieve lower gate resistance, eliminate B penetration issues, and reduce interaction of the gate materials and the underlying high-k films. This study discusses the challenges and opportunities in identifying candidate material systems and associated processing techniques for future generation CMOS metal gates. The development of a standardized technique to accurately extract the work function of metal gates on hafnium based high-k dielectrics is forwarded. Additionally, a preliminary understanding of the structure-property inter-relationship of candidate metals is presented. The material systems include a) pure metals, b) metal nitrides, c) ternary metal nitrides, and d) alloys.",

author = "Prashant Majhi and Husam Alshareef and Wen, {Huang Chun} and Kisik Choi and Patrick Lysaght and Craig Huffman and Hongfa Luan and Rusty Harris and Lee, {Byoung Hun} and Chuck Ramiller",

year = "2005",

language = "English (US)",

isbn = "1566774683",

series = "Proceedings - Electrochemical Society",

pages = "56--61",

booktitle = "Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005",

note = "4th International Conference on Semiconductor Technology, ISTC 2005 ; Conference date: 15-03-2005 Through 17-03-2005",

}

Majhi, P, Alshareef, H, Wen, HC, Choi, K, Lysaght, P, Huffman, C, Luan, H, Harris, R, Lee, BH & Ramiller, C 2005, On the structure-property inter-relationships of metal gate electrodes for future generation CMOS. in Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005. Proceedings - Electrochemical Society, vol. PV 2005-12, pp. 56-61, 4th International Conference on Semiconductor Technology, ISTC 2005, Shanghai, China, 03/15/05.

On the structure-property inter-relationships of metal gate electrodes for future generation CMOS. / Majhi, Prashant; Alshareef, Husam; Wen, Huang Chun et al.
Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005. 2005. p. 56-61 (Proceedings - Electrochemical Society; Vol. PV 2005-12).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - On the structure-property inter-relationships of metal gate electrodes for future generation CMOS

AU - Majhi, Prashant

AU - Alshareef, Husam

AU - Wen, Huang Chun

AU - Choi, Kisik

AU - Lysaght, Patrick

AU - Huffman, Craig

AU - Luan, Hongfa

AU - Harris, Rusty

AU - Lee, Byoung Hun

AU - Ramiller, Chuck

PY - 2005

Y1 - 2005

N2 - According to the ITRS (2004) high performance device trends will soon require high-k dielectrics with metal gate electrodes to remove poly depletion effects, achieve lower gate resistance, eliminate B penetration issues, and reduce interaction of the gate materials and the underlying high-k films. This study discusses the challenges and opportunities in identifying candidate material systems and associated processing techniques for future generation CMOS metal gates. The development of a standardized technique to accurately extract the work function of metal gates on hafnium based high-k dielectrics is forwarded. Additionally, a preliminary understanding of the structure-property inter-relationship of candidate metals is presented. The material systems include a) pure metals, b) metal nitrides, c) ternary metal nitrides, and d) alloys.

AB - According to the ITRS (2004) high performance device trends will soon require high-k dielectrics with metal gate electrodes to remove poly depletion effects, achieve lower gate resistance, eliminate B penetration issues, and reduce interaction of the gate materials and the underlying high-k films. This study discusses the challenges and opportunities in identifying candidate material systems and associated processing techniques for future generation CMOS metal gates. The development of a standardized technique to accurately extract the work function of metal gates on hafnium based high-k dielectrics is forwarded. Additionally, a preliminary understanding of the structure-property inter-relationship of candidate metals is presented. The material systems include a) pure metals, b) metal nitrides, c) ternary metal nitrides, and d) alloys.

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M3 - Conference contribution

AN - SCOPUS:33645695795

SN - 1566774683

SN - 9781566774680

T3 - Proceedings - Electrochemical Society

SP - 56

EP - 61

BT - Proceedings of the 4th International Conference on Semiconductor Technology, ISTC 2005

T2 - 4th International Conference on Semiconductor Technology, ISTC 2005

Y2 - 15 March 2005 through 17 March 2005

ER -

On the structure-property inter-relationships of metal gate electrodes for future generation CMOS

Abstract

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ASJC Scopus subject areas

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