The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2, the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament and its electrical properties can be provided. As an example, a simple geometrical model for the microscopic structure of the CF is proposed and it is used to track the change of the conducting properties during the set/reset transitions. The model has been further checked by measurements at the nanoscale by means of CAFM.
|Title of host publication
|Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
|Institute of Electrical and Electronics Engineers Inc.
|Published - Jan 23 2014