On the mathematical modeling of memristors

Ahmed G. Radwan, Khaled N. Salama, Mohammed A. Zidan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

82 Scopus citations


Since the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor's resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time.
Original languageEnglish (US)
Title of host publication2010 International Conference on Microelectronics
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Print)9781612841496
StatePublished - Jan 21 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01


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