On the design of balanced carbon nanotube field-effect transistor gates

Kapil Dev, Yehia Massoud

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we analyze the compact models for carbon nanotube field-effect transistors (CNTFET) and observe that the logic-gates implemented using CNTFET with unoptimized device parameter have asymmetric voltage transfer characteristic. We propose the design of a balanced inverter circuit implemented using CNTFET devices. The proposed inverter circuit is functional over a wide range of supply voltage, from sub-threshold voltage to nominal supply voltage. © 2011 IEEE.
Original languageEnglish (US)
Title of host publication2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011
Pages204-207
Number of pages4
DOIs
StatePublished - Dec 1 2011
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2022-09-13

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