On-Chip Detection from Directly Modulated Quantum Dot Microring Lasers on Si

Yating Wan; Daehwan Jung; Daisuke Inoue; Justin C. Norman; Chen Shang; Arthur C. Cossard; John E. Bowers

doi:10.23919/PIERS.2018.8598216

On-Chip Detection from Directly Modulated Quantum Dot Microring Lasers on Si

Yating Wan, Daehwan Jung, Daisuke Inoue, Justin C. Norman, Chen Shang, Arthur C. Cossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We present on-chip detection from directly modulated microring quantum-dot (QD) lasers grown on exact (001) Si. Static and dynamic properties of the QD-based microring lasers and microdetectors have been investigated. The ring lasers exhibit high temperature stabilities up to 100°C, low thresholds down to sub milliamp, and a wide 3 dB bandwidth up to 6.5 GHz. The microdetectors show small dark currents down to 0.2 nA and eye openings up to 10 Gbit/s with non-return-to-zero signals. Light emission from the microring lasers can be probed via the changes in the photocurrent of the microdetectors, realizing on-chip QD laser and detector system on Si by epitaxy. Furthermore, demonstrated downscaling abilities of the QD based devices promise improved integration density for photonic integrated circuits (PIC).

Original language	English (US)
Title of host publication	Progress in Electromagnetics Research Symposium
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	249-253
Number of pages	5
ISBN (Print)	9784885523151
DOIs	https://doi.org/10.23919/PIERS.2018.8598216
State	Published - Dec 31 2018
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

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@inproceedings{c98bd8e1d0074a6bb15e2853a62278e7,

title = "On-Chip Detection from Directly Modulated Quantum Dot Microring Lasers on Si",

abstract = "We present on-chip detection from directly modulated microring quantum-dot (QD) lasers grown on exact (001) Si. Static and dynamic properties of the QD-based microring lasers and microdetectors have been investigated. The ring lasers exhibit high temperature stabilities up to 100°C, low thresholds down to sub milliamp, and a wide 3 dB bandwidth up to 6.5 GHz. The microdetectors show small dark currents down to 0.2 nA and eye openings up to 10 Gbit/s with non-return-to-zero signals. Light emission from the microring lasers can be probed via the changes in the photocurrent of the microdetectors, realizing on-chip QD laser and detector system on Si by epitaxy. Furthermore, demonstrated downscaling abilities of the QD based devices promise improved integration density for photonic integrated circuits (PIC).",

author = "Yating Wan and Daehwan Jung and Daisuke Inoue and Norman, {Justin C.} and Chen Shang and Cossard, {Arthur C.} and Bowers, {John E.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2018",

month = dec,

day = "31",

doi = "10.23919/PIERS.2018.8598216",

language = "English (US)",

isbn = "9784885523151",

pages = "249--253",

booktitle = "Progress in Electromagnetics Research Symposium",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

TY - GEN

T1 - On-Chip Detection from Directly Modulated Quantum Dot Microring Lasers on Si

AU - Wan, Yating

AU - Jung, Daehwan

AU - Inoue, Daisuke

AU - Norman, Justin C.

AU - Shang, Chen

AU - Cossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2018/12/31

Y1 - 2018/12/31

N2 - We present on-chip detection from directly modulated microring quantum-dot (QD) lasers grown on exact (001) Si. Static and dynamic properties of the QD-based microring lasers and microdetectors have been investigated. The ring lasers exhibit high temperature stabilities up to 100°C, low thresholds down to sub milliamp, and a wide 3 dB bandwidth up to 6.5 GHz. The microdetectors show small dark currents down to 0.2 nA and eye openings up to 10 Gbit/s with non-return-to-zero signals. Light emission from the microring lasers can be probed via the changes in the photocurrent of the microdetectors, realizing on-chip QD laser and detector system on Si by epitaxy. Furthermore, demonstrated downscaling abilities of the QD based devices promise improved integration density for photonic integrated circuits (PIC).

AB - We present on-chip detection from directly modulated microring quantum-dot (QD) lasers grown on exact (001) Si. Static and dynamic properties of the QD-based microring lasers and microdetectors have been investigated. The ring lasers exhibit high temperature stabilities up to 100°C, low thresholds down to sub milliamp, and a wide 3 dB bandwidth up to 6.5 GHz. The microdetectors show small dark currents down to 0.2 nA and eye openings up to 10 Gbit/s with non-return-to-zero signals. Light emission from the microring lasers can be probed via the changes in the photocurrent of the microdetectors, realizing on-chip QD laser and detector system on Si by epitaxy. Furthermore, demonstrated downscaling abilities of the QD based devices promise improved integration density for photonic integrated circuits (PIC).

UR - https://ieeexplore.ieee.org/document/8598216/

UR - http://www.scopus.com/inward/record.url?scp=85060909504&partnerID=8YFLogxK

U2 - 10.23919/PIERS.2018.8598216

DO - 10.23919/PIERS.2018.8598216

M3 - Conference contribution

SN - 9784885523151

SP - 249

EP - 253

BT - Progress in Electromagnetics Research Symposium

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

On-Chip Detection from Directly Modulated Quantum Dot Microring Lasers on Si

Abstract

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