On band-to-band tunneling and field management in NiOx/β-Ga2O3 PN junction and PiN diodes

Ankita Mukherjee, Jose Manuel Taboada Vasquez, Aasim Ashai, Saravanan Yuvaraja, Manoj Rajbhar, Biplab Sarkar*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Due to the non-availability of p-type β-Ga2O3 films, p-type NiO x is gaining attention as a promising alternative to complement the n-type β-Ga2O3 films. This work investigated the band-to-band tunneling (BTBT) related reverse leakage current in NiO x /β-Ga2O3 PN junction diodes. The analysis reveals that a low barrier between the valence band maxima of NiO x and conduction band minima of β-Ga2O3 may promote direct BTBT and trap-assisted BTBT currents during the reverse bias. On the contrary, NiO x /β-Ga2O3 diodes in PiN configuration offer a wider BTBT depletion width and lower peak electric field, lowering the reverse leakage current by orders of magnitude. Thus, we show that NiO x /β-Ga2O3 heterojunction diodes in PiN configuration offer better field management strategies and suppression of the reverse leakage. The analysis performed in this work is thought to be valuable in informing device-design of NiO x /β-Ga2O3 heterojunction diodes for future high-power applications.

Original languageEnglish (US)
Article number475104
JournalJournal of Physics D: Applied Physics
Volume56
Issue number47
DOIs
StatePublished - Nov 23 2023

Bibliographical note

Funding Information:
The KAUST researchers are grateful for the funding support of Baseline Fund: BAS/1/1664-01-01, Near-term Grand Challenge Fund: REI/1/4999-01-01, and Impact Acceleration Fund: REI/1/5124-01-01. IIT Roorkee researchers are grateful to the graduate fellowship received from the Ministry of Education, Govt. of India.

Publisher Copyright:
© 2023 IOP Publishing Ltd.

Keywords

  • BTBT
  • critical field
  • Frenkel-Poole emission
  • heterojunction
  • trap-assisted tunneling
  • β-GaO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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