Observation of weak antilocalization effect in high-quality ScNiBi single crystal

L. Deng, Z. H. Liu, X. Q. Ma, Z. P. Hou, E. K. Liu, X. K. Xi, W. H. Wang*, G. H. Wu, X. X. Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


In this paper, we have successfully grown the high-quality ScNiBi single crystals by a Bi flux method and investigated their electronic-transport properties. It was found that the ScNiBi single crystal is a gapless semiconductor with positive linear magnetoresistance (MR). Moreover, the field-dependent MR in the low-field region has demonstrated obvious weak antilocalization (WAL) effect below 50 K. The extremely large prefactor α and angle-dependent magnetoconductance ΔGxx suggest that the WAL effect originates from the contribution of a strong bulk spin-orbital coupling.

Original languageEnglish (US)
Article number105106
JournalJournal of Applied Physics
Issue number10
StatePublished - Mar 14 2017

Bibliographical note

Publisher Copyright:
© 2017 Author(s).

ASJC Scopus subject areas

  • General Physics and Astronomy


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