Abstract
The effect of grain boundaries in high hole mobility organic blend films of diF-TES ADT:PTAA is evaluated using conductive-AFM measurements revealing the presence of unusually conductive grain boundaries. The latter characteristic has not been reported previously for any other organic semiconducting film system and is believed to underpin the excellent and morphology-independent hole transport characteristics seen in these composite films.
Original language | English (US) |
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Pages (from-to) | 4320-4326 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 25 |
Issue number | 31 |
DOIs | |
State | Published - Aug 21 2013 |
Externally published | Yes |
Keywords
- charge transport
- conductive AFM
- grain boundary
- organic blend semiconductors
- organic transistors
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering