Abstract
We study the Hall coefficient over a wide temperature range in co-sputtered Cu:SiO2 samples with metal volume fraction in the range of 0.45≤x≤0.8. With decreasing metal volume fraction x, the samples change from metal to insulator and the Hall coefficient R increases drastically. A maximum has been observed at x = 0.51, which is approximately 700 times larger than that at x = 0.8. This enhancement far exceeds the factor of 20, which can be derived from the classical percolation (finite size scaling) theory. Based on these observations, we conclude that the non-magnetic GHE arises most probably from quantum interference effects on the mesoscopic scale.
Original language | English (US) |
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Pages (from-to) | 81-83 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 279 |
Issue number | 1-3 |
DOIs | |
State | Published - Apr 2000 |
Externally published | Yes |
Event | The 5th International Conference on Electrical Transport and Optical Properties of Inhomogeneous Media (ETOPIM5) - Kowloon Tong, Hong Kong Duration: Jun 21 1999 → Jun 25 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering