O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si

Yating Wan; Daehwan Jung; Justin Norman; Chen Shang; Ian Macfarlane; Qiang Li; M. J. Kennedy; Arthur C. Gossard; Kei May Lau; John E. Bowers

doi:10.1364/OE.25.026853

O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si

Yating Wan, Daehwan Jung, Justin Norman, Chen Shang, Ian Macfarlane, Qiang Li, M. J. Kennedy, Arthur C. Gossard, Kei May Lau, John E. Bowers

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 °C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50 µm and a ring width of 4 μm, while a sub-milliamp threshold of 0.6 mA was demonstrated on the V-groove Si template with a smaller cavity size of 5-μm outer-ring radius and 3-μm ring width. Evaluations were also made with devices fabricated simultaneously on native GaAs substrates over a significant sampling analysis. The overall assessment spotlights compelling insights in exploring the optimum epitaxial scheme for low-threshold lasing on industry standard Si substrates.

Original language	English (US)
Pages (from-to)	26853-26860
Number of pages	8
Journal	Optics Express
Volume	25
Issue number	22
DOIs	https://doi.org/10.1364/OE.25.026853
State	Published - Oct 30 2017
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si",

abstract = "We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 °C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50 µm and a ring width of 4 μm, while a sub-milliamp threshold of 0.6 mA was demonstrated on the V-groove Si template with a smaller cavity size of 5-μm outer-ring radius and 3-μm ring width. Evaluations were also made with devices fabricated simultaneously on native GaAs substrates over a significant sampling analysis. The overall assessment spotlights compelling insights in exploring the optimum epitaxial scheme for low-threshold lasing on industry standard Si substrates.",

author = "Yating Wan and Daehwan Jung and Justin Norman and Chen Shang and Ian Macfarlane and Qiang Li and Kennedy, {M. J.} and Gossard, {Arthur C.} and Lau, {Kei May} and Bowers, {John E.}",

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doi = "10.1364/OE.25.026853",

language = "English (US)",

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T1 - O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si

AU - Wan, Yating

AU - Jung, Daehwan

AU - Norman, Justin

AU - Shang, Chen

AU - Macfarlane, Ian

AU - Li, Qiang

AU - Kennedy, M. J.

AU - Gossard, Arthur C.

AU - Lau, Kei May

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2017/10/30

Y1 - 2017/10/30

N2 - We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 °C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50 µm and a ring width of 4 μm, while a sub-milliamp threshold of 0.6 mA was demonstrated on the V-groove Si template with a smaller cavity size of 5-μm outer-ring radius and 3-μm ring width. Evaluations were also made with devices fabricated simultaneously on native GaAs substrates over a significant sampling analysis. The overall assessment spotlights compelling insights in exploring the optimum epitaxial scheme for low-threshold lasing on industry standard Si substrates.

AB - We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 °C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50 µm and a ring width of 4 μm, while a sub-milliamp threshold of 0.6 mA was demonstrated on the V-groove Si template with a smaller cavity size of 5-μm outer-ring radius and 3-μm ring width. Evaluations were also made with devices fabricated simultaneously on native GaAs substrates over a significant sampling analysis. The overall assessment spotlights compelling insights in exploring the optimum epitaxial scheme for low-threshold lasing on industry standard Si substrates.

UR - https://opg.optica.org/abstract.cfm?URI=oe-25-22-26853

UR - http://www.scopus.com/inward/record.url?scp=85032918298&partnerID=8YFLogxK

U2 - 10.1364/OE.25.026853

DO - 10.1364/OE.25.026853

M3 - Article

SN - 1094-4087

VL - 25

SP - 26853

EP - 26860

JO - Optics Express

JF - Optics Express

IS - 22

ER -

O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si

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