Abstract
Samples with InGaAs-InGaAsP single quantum well laser structures were exposed to Ar plasma generated by an electron cyclotron resonance system at different process conditions. During the plasma treatment the Ar flow rate and process pressure were fixed at 50 sccm and 30 mTorr, respectively. Differential bandgap shifts of up to 72 meV were obtained between the plasma treated and the control samples.
| Original language | English (US) |
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| Pages | 234 |
| Number of pages | 1 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: Sep 10 2000 → Sep 15 2000 |
Other
| Other | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) |
|---|---|
| City | Nice, France |
| Period | 09/10/00 → 09/15/00 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering