Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

Somak Mitra; Yusin Pak; Naresh Alaal; Mohamed N. Hedhili; Dhaifallah R. Almalawi; Norah M. Alwadai; Kalaivanan Loganathan; Yogeenath Kumarasan; Namsoo Lim; Gun Y. Jung; Iman S. Roqan

doi:10.1002/adom.201900801

Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

Somak Mitra, Yusin Pak, Naresh Alaal, Mohamed N. Hedhili, Dhaifallah R. Almalawi, Norah M. Alwadai, Kalaivanan Loganathan, Yogeenath Kumarasan, Namsoo Lim, Gun Y. Jung, Iman S. Roqan

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50 Scopus citations

Abstract

Wide bandgap semiconductor (WBGS)-based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p-type WBGS that operates in the DUV region (

Original language	English (US)
Pages (from-to)	1900801
Journal	Advanced Optical Materials
Volume	7
Issue number	21
DOIs	https://doi.org/10.1002/adom.201900801
State	Published - Aug 8 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1319-01-01
Acknowledgements: S.M. and Y.P. contributed equally to this work. The authors acknowledge the support of Core lab facilities of the King Abdullah University of Science and Technology (KAUST) for TEM, FTIR, UV–vis, and XPS measurement. The authors thank KAUST for the finance support using the base fund number (BAS/1/1319-01-01). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST in Thuwal, Saudi Arabia. Authors thanks Dr. Sergei Lopatin form KAUST Core lab for assisting us in the TEM measurements. Authors acknowledge the support of Heno Hwang, scientific illustrators at KAUST for producing TOC image.

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10.1002/adom.201900801

https://repository.kaust.edu.sa/bitstream/10754/656556/1/AOM%20Manuscript_final_clearVersion.pdf

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@article{4ce2f3320710418baed0107eec065409,

title = "Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices",

abstract = "Wide bandgap semiconductor (WBGS)-based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p-type WBGS that operates in the DUV region (",

author = "Somak Mitra and Yusin Pak and Naresh Alaal and Hedhili, {Mohamed N.} and Almalawi, {Dhaifallah R.} and Alwadai, {Norah M.} and Kalaivanan Loganathan and Yogeenath Kumarasan and Namsoo Lim and Jung, {Gun Y.} and Roqan, {Iman S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1319-01-01 Acknowledgements: S.M. and Y.P. contributed equally to this work. The authors acknowledge the support of Core lab facilities of the King Abdullah University of Science and Technology (KAUST) for TEM, FTIR, UV–vis, and XPS measurement. The authors thank KAUST for the finance support using the base fund number (BAS/1/1319-01-01). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST in Thuwal, Saudi Arabia. Authors thanks Dr. Sergei Lopatin form KAUST Core lab for assisting us in the TEM measurements. Authors acknowledge the support of Heno Hwang, scientific illustrators at KAUST for producing TOC image.",

year = "2019",

month = aug,

day = "8",

doi = "10.1002/adom.201900801",

language = "English (US)",

volume = "7",

pages = "1900801",

journal = "Advanced Optical Materials",

issn = "2195-1071",

publisher = "John Wiley & Sons Inc.",

number = "21",

}

TY - JOUR

T1 - Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

AU - Mitra, Somak

AU - Pak, Yusin

AU - Alaal, Naresh

AU - Hedhili, Mohamed N.

AU - Almalawi, Dhaifallah R.

AU - Alwadai, Norah M.

AU - Loganathan, Kalaivanan

AU - Kumarasan, Yogeenath

AU - Lim, Namsoo

AU - Jung, Gun Y.

AU - Roqan, Iman S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1319-01-01 Acknowledgements: S.M. and Y.P. contributed equally to this work. The authors acknowledge the support of Core lab facilities of the King Abdullah University of Science and Technology (KAUST) for TEM, FTIR, UV–vis, and XPS measurement. The authors thank KAUST for the finance support using the base fund number (BAS/1/1319-01-01). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST in Thuwal, Saudi Arabia. Authors thanks Dr. Sergei Lopatin form KAUST Core lab for assisting us in the TEM measurements. Authors acknowledge the support of Heno Hwang, scientific illustrators at KAUST for producing TOC image.

PY - 2019/8/8

Y1 - 2019/8/8

N2 - Wide bandgap semiconductor (WBGS)-based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p-type WBGS that operates in the DUV region (

AB - Wide bandgap semiconductor (WBGS)-based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p-type WBGS that operates in the DUV region (

UR - http://hdl.handle.net/10754/656556

UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/adom.201900801

UR - http://www.scopus.com/inward/record.url?scp=85070514213&partnerID=8YFLogxK

U2 - 10.1002/adom.201900801

DO - 10.1002/adom.201900801

M3 - Article

SN - 2195-1071

VL - 7

SP - 1900801

JO - Advanced Optical Materials

JF - Advanced Optical Materials

IS - 21

ER -

Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

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