Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

Somak Mitra, Yusin Pak, Naresh Alaal, Mohamed N. Hedhili, Dhaifallah R. Almalawi, Norah M. Alwadai, Kalaivanan Loganathan, Yogeenath Kumarasan, Namsoo Lim, Gun Y. Jung, Iman S. Roqan

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Wide bandgap semiconductor (WBGS)-based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p-type WBGS that operates in the DUV region (
Original languageEnglish (US)
Pages (from-to)1900801
JournalAdvanced Optical Materials
Volume7
Issue number21
DOIs
StatePublished - Aug 8 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1319-01-01
Acknowledgements: S.M. and Y.P. contributed equally to this work. The authors acknowledge the support of Core lab facilities of the King Abdullah University of Science and Technology (KAUST) for TEM, FTIR, UV–vis, and XPS measurement. The authors thank KAUST for the finance support using the base fund number (BAS/1/1319-01-01). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST in Thuwal, Saudi Arabia. Authors thanks Dr. Sergei Lopatin form KAUST Core lab for assisting us in the TEM measurements. Authors acknowledge the support of Heno Hwang, scientific illustrators at KAUST for producing TOC image.

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