Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices

Iman S. Roqan; Somak Mitra; Norah Alwadai; Hadeel Alamoudi; Zohoor Alharbi; Fatimah Alreshidi; Bin Xin; Yusin Pak

doi:10.1117/12.2664673

Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices

Iman S. Roqan^*, Somak Mitra, Norah Alwadai, Hadeel Alamoudi, Zohoor Alharbi, Fatimah Alreshidi, Bin Xin, Yusin Pak

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Obtaining p-type wide bandgap semiconductors operating in the deep UV (DUV) range (λ < 300 nm) is still challenging. However, as a part of this work, we developed novel p-type solution-processed wide bandgap semiconductors based on solution-processed manganese oxide quantum dots (MnO-QDs) with the gap energy exceeding 4 eV synthesized by ultrafast laser ablation, which can be adopted for flexible and solar-blind DUV optoelectronics. We conducted advanced optical, structural, and electrical characterizations, revealing unique properties of this material. Our findings show excellent band alignment between these QDs and other wide bandgap semiconductors, such as GaN and Ga2O3. The high performance of a solar-blind self-powered DUV photodetector based on p-n junction that comprises n-type wide bandgap semiconductors and p-type MnO-QDs is demonstrated.

Original language	English (US)
Title of host publication	Oxide-based Materials and Devices XIV
Editors	David J. Rogers, Ferechteh H. Teherani
Publisher	SPIE
ISBN (Electronic)	9781510659490
DOIs	https://doi.org/10.1117/12.2664673
State	Published - 2023
Event	Oxide-based Materials and Devices XIV 2023 - San Francisco, United States Duration: Jan 30 2023 → Feb 2 2023

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12422
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-based Materials and Devices XIV 2023
Country/Territory	United States
City	San Francisco
Period	01/30/23 → 02/2/23

Bibliographical note

Publisher Copyright:
© 2023 SPIE.

Keywords

metal-oxides
p-n junction
p-type semiconductor
photodiode
spin-optoelectronics
spin-photodetector
spin-solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2664673

Cite this

Roqan, I. S., Mitra, S., Alwadai, N., Alamoudi, H., Alharbi, Z., Alreshidi, F., Xin, B., & Pak, Y. (2023). Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices. In D. J. Rogers, & F. H. Teherani (Eds.), Oxide-based Materials and Devices XIV Article 1242209 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12422). SPIE. https://doi.org/10.1117/12.2664673

@inproceedings{17cbc6cfabc34bf6acc15f6ce77ea317,

title = "Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices",

abstract = "Obtaining p-type wide bandgap semiconductors operating in the deep UV (DUV) range (λ < 300 nm) is still challenging. However, as a part of this work, we developed novel p-type solution-processed wide bandgap semiconductors based on solution-processed manganese oxide quantum dots (MnO-QDs) with the gap energy exceeding 4 eV synthesized by ultrafast laser ablation, which can be adopted for flexible and solar-blind DUV optoelectronics. We conducted advanced optical, structural, and electrical characterizations, revealing unique properties of this material. Our findings show excellent band alignment between these QDs and other wide bandgap semiconductors, such as GaN and Ga2O3. The high performance of a solar-blind self-powered DUV photodetector based on p-n junction that comprises n-type wide bandgap semiconductors and p-type MnO-QDs is demonstrated.",

keywords = "metal-oxides, p-n junction, p-type semiconductor, photodiode, spin-optoelectronics, spin-photodetector, spin-solar cell",

author = "Roqan, {Iman S.} and Somak Mitra and Norah Alwadai and Hadeel Alamoudi and Zohoor Alharbi and Fatimah Alreshidi and Bin Xin and Yusin Pak",

note = "Publisher Copyright: {\textcopyright} 2023 SPIE.; Oxide-based Materials and Devices XIV 2023 ; Conference date: 30-01-2023 Through 02-02-2023",

year = "2023",

doi = "10.1117/12.2664673",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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Roqan, IS, Mitra, S, Alwadai, N, Alamoudi, H, Alharbi, Z, Alreshidi, F, Xin, B & Pak, Y 2023, Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices. in DJ Rogers & FH Teherani (eds), Oxide-based Materials and Devices XIV., 1242209, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12422, SPIE, Oxide-based Materials and Devices XIV 2023, San Francisco, United States, 01/30/23. https://doi.org/10.1117/12.2664673

Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices. / Roqan, Iman S.; Mitra, Somak; Alwadai, Norah et al.
Oxide-based Materials and Devices XIV. ed. / David J. Rogers; Ferechteh H. Teherani. SPIE, 2023. 1242209 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12422).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices

AU - Roqan, Iman S.

AU - Mitra, Somak

AU - Alwadai, Norah

AU - Alamoudi, Hadeel

AU - Alharbi, Zohoor

AU - Alreshidi, Fatimah

AU - Xin, Bin

AU - Pak, Yusin

PY - 2023

Y1 - 2023

N2 - Obtaining p-type wide bandgap semiconductors operating in the deep UV (DUV) range (λ < 300 nm) is still challenging. However, as a part of this work, we developed novel p-type solution-processed wide bandgap semiconductors based on solution-processed manganese oxide quantum dots (MnO-QDs) with the gap energy exceeding 4 eV synthesized by ultrafast laser ablation, which can be adopted for flexible and solar-blind DUV optoelectronics. We conducted advanced optical, structural, and electrical characterizations, revealing unique properties of this material. Our findings show excellent band alignment between these QDs and other wide bandgap semiconductors, such as GaN and Ga2O3. The high performance of a solar-blind self-powered DUV photodetector based on p-n junction that comprises n-type wide bandgap semiconductors and p-type MnO-QDs is demonstrated.

AB - Obtaining p-type wide bandgap semiconductors operating in the deep UV (DUV) range (λ < 300 nm) is still challenging. However, as a part of this work, we developed novel p-type solution-processed wide bandgap semiconductors based on solution-processed manganese oxide quantum dots (MnO-QDs) with the gap energy exceeding 4 eV synthesized by ultrafast laser ablation, which can be adopted for flexible and solar-blind DUV optoelectronics. We conducted advanced optical, structural, and electrical characterizations, revealing unique properties of this material. Our findings show excellent band alignment between these QDs and other wide bandgap semiconductors, such as GaN and Ga2O3. The high performance of a solar-blind self-powered DUV photodetector based on p-n junction that comprises n-type wide bandgap semiconductors and p-type MnO-QDs is demonstrated.

KW - metal-oxides

KW - p-n junction

KW - p-type semiconductor

KW - photodiode

KW - spin-optoelectronics

KW - spin-photodetector

KW - spin-solar cell

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M3 - Conference contribution

AN - SCOPUS:85159773572

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-based Materials and Devices XIV

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

PB - SPIE

T2 - Oxide-based Materials and Devices XIV 2023

Y2 - 30 January 2023 through 2 February 2023

ER -

Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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