@inproceedings{778dd88dde144a6d947b5819de210af4,
title = "Novel growth and device concepts for high-efficiency InGaN quantum wells light-emitting diodes",
abstract = "The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal- quantumefficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.",
author = "Hongping Zhao and Guangyu Liu and Li, {Xiao Hang} and Ee, {Yik Khoon} and HuaTong and Jing Zhang and Huang, {G. S.} and Nelson Tansu",
year = "2010",
language = "English (US)",
isbn = "9781557528902",
series = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010",
booktitle = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference",
note = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 ; Conference date: 16-05-2010 Through 21-05-2010",
}