Notice of Removal: Suns-Voc characteristics of Si heterojunction solar cells: Role of the heterointerface

Raghu V.K. Chavali; Jian V. Li; Corsin Battaglia; Stefaan De Wolf; Jeffery L. Gray; Muhammad A. Alam

doi:10.1109/PVSC.2017.8366838

Notice of Removal: Suns-V_oc characteristics of Si heterojunction solar cells: Role of the heterointerface

Raghu V.K. Chavali, Jian V. Li, Corsin Battaglia, Stefaan De Wolf, Jeffery L. Gray, Muhammad A. Alam

Material Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Suns-Voc measurements are frequently used to study the intrinsic potential of a solar cell technology, by excluding the parasitic series resistance effects. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the results show a peculiar turn-around at illumination intensities that has been attributed to an extrinsic Schottky contact. In this paper, we demonstrate that this voltage turn-around rather may arise from the heterojunction (HJ), inherent to SHJ solar cell, without having to invoke the Schottky contact assumption. We use numerical simulations to explore the full J-V under different illumination and temperature conditions. Using these J-Vs, we establish the bias, intensity, temperature conditions necessary to observe the voltage turn-around in these cells. We validate the HJ hypothesis using an extensive set of experiments on a high- efficiency SHJ solar cell. Our work establishes Suns-Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in heterojunction devices.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366838
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	06/25/17 → 06/30/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2017.8366838

Cite this

Chavali, R. V. K., Li, J. V., Battaglia, C., De Wolf, S., Gray, J. L., & Alam, M. A. (2017). Notice of Removal: Suns-V_oc characteristics of Si heterojunction solar cells: Role of the heterointerface. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-3). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366838

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title = "Notice of Removal: Suns-Voc characteristics of Si heterojunction solar cells: Role of the heterointerface",

abstract = "Suns-Voc measurements are frequently used to study the intrinsic potential of a solar cell technology, by excluding the parasitic series resistance effects. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the results show a peculiar turn-around at illumination intensities that has been attributed to an extrinsic Schottky contact. In this paper, we demonstrate that this voltage turn-around rather may arise from the heterojunction (HJ), inherent to SHJ solar cell, without having to invoke the Schottky contact assumption. We use numerical simulations to explore the full J-V under different illumination and temperature conditions. Using these J-Vs, we establish the bias, intensity, temperature conditions necessary to observe the voltage turn-around in these cells. We validate the HJ hypothesis using an extensive set of experiments on a high- efficiency SHJ solar cell. Our work establishes Suns-Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in heterojunction devices.",

author = "Chavali, {Raghu V.K.} and Li, {Jian V.} and Corsin Battaglia and {De Wolf}, Stefaan and Gray, {Jeffery L.} and Alam, {Muhammad A.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366838",

language = "English (US)",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

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Chavali, RVK, Li, JV, Battaglia, C, De Wolf, S, Gray, JL & Alam, MA 2017, Notice of Removal: Suns-V_oc characteristics of Si heterojunction solar cells: Role of the heterointerface. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 06/25/17. https://doi.org/10.1109/PVSC.2017.8366838

Notice of Removal: Suns-V_oc characteristics of Si heterojunction solar cells: Role of the heterointerface. / Chavali, Raghu V.K.; Li, Jian V.; Battaglia, Corsin et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-3 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chavali, Raghu V.K.

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AU - De Wolf, Stefaan

AU - Gray, Jeffery L.

AU - Alam, Muhammad A.

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AB - Suns-Voc measurements are frequently used to study the intrinsic potential of a solar cell technology, by excluding the parasitic series resistance effects. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the results show a peculiar turn-around at illumination intensities that has been attributed to an extrinsic Schottky contact. In this paper, we demonstrate that this voltage turn-around rather may arise from the heterojunction (HJ), inherent to SHJ solar cell, without having to invoke the Schottky contact assumption. We use numerical simulations to explore the full J-V under different illumination and temperature conditions. Using these J-Vs, we establish the bias, intensity, temperature conditions necessary to observe the voltage turn-around in these cells. We validate the HJ hypothesis using an extensive set of experiments on a high- efficiency SHJ solar cell. Our work establishes Suns-Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in heterojunction devices.

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Chavali RVK, Li JV, Battaglia C, De Wolf S, Gray JL, Alam MA. Notice of Removal: Suns-V_oc characteristics of Si heterojunction solar cells: Role of the heterointerface. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-3. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366838