Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

Aitian Chen; Ren-Ci Peng; Bin Fang; Tiannan Yang; Yan Wen; Dongxing Zheng; Chenhui Zhang; Chen Liu; Zibin Li; Peisen Li; Yan Li; Yonggang Zhao; Ce-Wen Nan; Ziqiang Qiu; Long-Qing Chen; Xixiang Zhang

doi:10.1002/adfm.202213402

Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

Aitian Chen, Ren-Ci Peng, Bin Fang, Tiannan Yang, Yan Wen, Dongxing Zheng, Chenhui Zhang, Chen Liu, Zibin Li, Peisen Li, Yan Li, Yonggang Zhao, Ce-Wen Nan, Ziqiang Qiu, Long-Qing Chen, Xixiang Zhang

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The magnetoelectric effect is technologically appealing because of its ability to manipulate magnetism using an electric field rather than magnetic field or current, thus providing a promising solution for the development of energy-efficient spintronics. Although 180° magnetization switching is vital to spintronic devices, the achievement of 180° magnetization switching via magnetoelectric coupling is still a fundamental challenge. Herein, voltage-driven full resistance switching of a magnetic tunnel junction (MTJ) with dipole interaction on a ferroelectric substrate through switchable parallel/antiparallel magnetization alignment is demonstrated. Parallel magnetization alignment along the y direction is obtained under a bias magnetic field. By rotating the magnetic easy axis via strain-mediated magnetoelectric coupling, the parallel magnetizations in the MTJ reorient to the x axis with opposite paths because of dipole interaction, thus resulting in antiparallel alignment. Moreover, this voltage switching of MTJs is nonvolatile owing to variations in dipole interaction and can be well understood via phase field simulations. The results provide an avenue to realize electrical switching of MTJs and are significant for exploring energy-efficient spintronic devices.

Original language	English (US)
Pages (from-to)	2213402
Journal	Advanced Functional Materials
DOIs	https://doi.org/10.1002/adfm.202213402
State	Published - Mar 10 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-03-14
Acknowledged KAUST grant number(s): ORA-CRG10-2021-4665, ORA-CRG8-2019-4081
Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) under Award Nos. ORA-CRG8-2019-4081 and ORA-CRG10-2021-4665. R.-C.P. acknowledges support from the National Natural Science Foundation of China under Grant No. 51902247. Z.Q. acknowledges support by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Contract No. DE-AC02-05CH11231 (van der Waals heterostructures program, KCWF16). The authors acknowledge the Nanofabrication Core Lab at KAUST for their assistance. The authors would like to thank Enago (www.enago.com) for the English language review.

ASJC Scopus subject areas

Biomaterials
Electrochemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/adfm.202213402

https://repository.kaust.edu.sa/bitstream/10754/690313/1/Nonvolatile%20Magnetoelectric%20Switching%20of%20Magnetic%20Tunnel%20Junctions%20with%20Dipole%20Interaction%20%281%29.pdf

Cite this

@article{9e78d46bf91e4603aa72f1bf39c35029,

title = "Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction",

abstract = "The magnetoelectric effect is technologically appealing because of its ability to manipulate magnetism using an electric field rather than magnetic field or current, thus providing a promising solution for the development of energy-efficient spintronics. Although 180° magnetization switching is vital to spintronic devices, the achievement of 180° magnetization switching via magnetoelectric coupling is still a fundamental challenge. Herein, voltage-driven full resistance switching of a magnetic tunnel junction (MTJ) with dipole interaction on a ferroelectric substrate through switchable parallel/antiparallel magnetization alignment is demonstrated. Parallel magnetization alignment along the y direction is obtained under a bias magnetic field. By rotating the magnetic easy axis via strain-mediated magnetoelectric coupling, the parallel magnetizations in the MTJ reorient to the x axis with opposite paths because of dipole interaction, thus resulting in antiparallel alignment. Moreover, this voltage switching of MTJs is nonvolatile owing to variations in dipole interaction and can be well understood via phase field simulations. The results provide an avenue to realize electrical switching of MTJs and are significant for exploring energy-efficient spintronic devices.",

author = "Aitian Chen and Ren-Ci Peng and Bin Fang and Tiannan Yang and Yan Wen and Dongxing Zheng and Chenhui Zhang and Chen Liu and Zibin Li and Peisen Li and Yan Li and Yonggang Zhao and Ce-Wen Nan and Ziqiang Qiu and Long-Qing Chen and Xixiang Zhang",

note = "KAUST Repository Item: Exported on 2023-03-14 Acknowledged KAUST grant number(s): ORA-CRG10-2021-4665, ORA-CRG8-2019-4081 Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) under Award Nos. ORA-CRG8-2019-4081 and ORA-CRG10-2021-4665. R.-C.P. acknowledges support from the National Natural Science Foundation of China under Grant No. 51902247. Z.Q. acknowledges support by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Contract No. DE-AC02-05CH11231 (van der Waals heterostructures program, KCWF16). The authors acknowledge the Nanofabrication Core Lab at KAUST for their assistance. The authors would like to thank Enago (www.enago.com) for the English language review.",

year = "2023",

month = mar,

day = "10",

doi = "10.1002/adfm.202213402",

language = "English (US)",

pages = "2213402",

journal = "Advanced Functional Materials",

issn = "1616-301X",

publisher = "John Wiley and Sons Ltd",

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TY - JOUR

T1 - Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

AU - Chen, Aitian

AU - Peng, Ren-Ci

AU - Fang, Bin

AU - Yang, Tiannan

AU - Wen, Yan

AU - Zheng, Dongxing

AU - Zhang, Chenhui

AU - Liu, Chen

AU - Li, Zibin

AU - Li, Peisen

AU - Li, Yan

AU - Zhao, Yonggang

AU - Nan, Ce-Wen

AU - Qiu, Ziqiang

AU - Chen, Long-Qing

AU - Zhang, Xixiang

N1 - KAUST Repository Item: Exported on 2023-03-14 Acknowledged KAUST grant number(s): ORA-CRG10-2021-4665, ORA-CRG8-2019-4081 Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) under Award Nos. ORA-CRG8-2019-4081 and ORA-CRG10-2021-4665. R.-C.P. acknowledges support from the National Natural Science Foundation of China under Grant No. 51902247. Z.Q. acknowledges support by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under Contract No. DE-AC02-05CH11231 (van der Waals heterostructures program, KCWF16). The authors acknowledge the Nanofabrication Core Lab at KAUST for their assistance. The authors would like to thank Enago (www.enago.com) for the English language review.

PY - 2023/3/10

Y1 - 2023/3/10

N2 - The magnetoelectric effect is technologically appealing because of its ability to manipulate magnetism using an electric field rather than magnetic field or current, thus providing a promising solution for the development of energy-efficient spintronics. Although 180° magnetization switching is vital to spintronic devices, the achievement of 180° magnetization switching via magnetoelectric coupling is still a fundamental challenge. Herein, voltage-driven full resistance switching of a magnetic tunnel junction (MTJ) with dipole interaction on a ferroelectric substrate through switchable parallel/antiparallel magnetization alignment is demonstrated. Parallel magnetization alignment along the y direction is obtained under a bias magnetic field. By rotating the magnetic easy axis via strain-mediated magnetoelectric coupling, the parallel magnetizations in the MTJ reorient to the x axis with opposite paths because of dipole interaction, thus resulting in antiparallel alignment. Moreover, this voltage switching of MTJs is nonvolatile owing to variations in dipole interaction and can be well understood via phase field simulations. The results provide an avenue to realize electrical switching of MTJs and are significant for exploring energy-efficient spintronic devices.

AB - The magnetoelectric effect is technologically appealing because of its ability to manipulate magnetism using an electric field rather than magnetic field or current, thus providing a promising solution for the development of energy-efficient spintronics. Although 180° magnetization switching is vital to spintronic devices, the achievement of 180° magnetization switching via magnetoelectric coupling is still a fundamental challenge. Herein, voltage-driven full resistance switching of a magnetic tunnel junction (MTJ) with dipole interaction on a ferroelectric substrate through switchable parallel/antiparallel magnetization alignment is demonstrated. Parallel magnetization alignment along the y direction is obtained under a bias magnetic field. By rotating the magnetic easy axis via strain-mediated magnetoelectric coupling, the parallel magnetizations in the MTJ reorient to the x axis with opposite paths because of dipole interaction, thus resulting in antiparallel alignment. Moreover, this voltage switching of MTJs is nonvolatile owing to variations in dipole interaction and can be well understood via phase field simulations. The results provide an avenue to realize electrical switching of MTJs and are significant for exploring energy-efficient spintronic devices.

UR - http://hdl.handle.net/10754/690313

UR - https://onlinelibrary.wiley.com/doi/10.1002/adfm.202213402

U2 - 10.1002/adfm.202213402

DO - 10.1002/adfm.202213402

M3 - Article

SN - 1616-301X

SP - 2213402

JO - Advanced Functional Materials

JF - Advanced Functional Materials

ER -

Nonvolatile Magnetoelectric Switching of Magnetic Tunnel Junctions with Dipole Interaction

Abstract

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ASJC Scopus subject areas

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