Nonvolatile magnetic half adder combined with memory writing

Ziyao Lu, Chengyue Xiong, Hongming Mou, Zhaochu Luo, Chi Fang, Caihua Wan, Huaqiang Wu, Xixiang Zhang, Xiaozhong Zhang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

With the rapid development of modern computers, problems caused by the performance gap between processor and memory in von-Neumann architecture have become significant. Spintronic devices, benefitting from the potential of achieving in-memory computing, have become one of the most competitive candidates to bridge the performance gap. Great efforts have been made to realize the functions of modern computers using spintronic devices. Here, a nonvolatile magnetic arithmetic logic device working at room temperature based on coupling of anomalous Hall effect of Ta/CoFeB/MgO multilayers with perpendicular magnetic anisotropy and elements with negative differential resistance characteristics has been proposed. Logic function of half adder has been experimentally demonstrated. This device could perform the arithmetic logic function of half adder and simultaneously write the computation result in storage bits in the process of performing logic operation. It has the potential to bridge the gap between arithmetic logic units and memory in modern computers.
Original languageEnglish (US)
Pages (from-to)182402
JournalApplied Physics Letters
Volume118
Issue number18
DOIs
StatePublished - May 3 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-05-06
Acknowledgements: This work was sponsored by National Key R&D Program of China (Grant No. 2017YFA0206202) and National Science Foundation of China (Grant No. 11674190). The authors thank Beijing National Center for Electron Microscopy for providing research facilities.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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