Non-Volatile Magnetic Memory Combined with AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching

Ziyao Lu; Chengyue Xiong; Hongming Mou; Zhaochu Luo; Wanjun Jiang; Xixiang Zhang; X. Z. Zhang

doi:10.1109/LMAG.2021.3056321

Non-Volatile Magnetic Memory Combined with AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching

Ziyao Lu, Chengyue Xiong, Hongming Mou, Zhaochu Luo, Wanjun Jiang, Xixiang Zhang, X. Z. Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

Spin-orbit torque(SOT) has been widely used in data writing of spintronic memory devices by current-induced magnetization switching. The typical structure of SOT-induced magnetization switching of ferromagnetic multilayers with perpendicular magnetic anisotropy(PMA) such as Ta/CoFeB/MgO allowed the ferromagnetic and adjacent nonmagnetic layer to be patterned independently. Here, we studied the role of device geometry in the manipulation of magnetization switchingby placing two separated CoFeB magnetic bits at different locations on Ta layer with trapezoid shape. Manipulation of the magnetization states of the magnetic bits was achieved simply by applying different write current. Both memory writing and Boolean logic functions AND/NAND with large logic output ratio have been demonstrated experimentally.

Original language	English (US)
Pages (from-to)	1-1
Number of pages	1
Journal	IEEE Magnetics Letters
DOIs	https://doi.org/10.1109/LMAG.2021.3056321
State	Published - 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-02-04
Acknowledgements: This work was sponsored by National Key R&D Program of China (Grant No.: 2017YFA0206202) and National Science Foundation of China (Grant No.: 11674190).

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10.1109/LMAG.2021.3056321

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title = "Non-Volatile Magnetic Memory Combined with AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching",

abstract = "Spin-orbit torque(SOT) has been widely used in data writing of spintronic memory devices by current-induced magnetization switching. The typical structure of SOT-induced magnetization switching of ferromagnetic multilayers with perpendicular magnetic anisotropy(PMA) such as Ta/CoFeB/MgO allowed the ferromagnetic and adjacent nonmagnetic layer to be patterned independently. Here, we studied the role of device geometry in the manipulation of magnetization switchingby placing two separated CoFeB magnetic bits at different locations on Ta layer with trapezoid shape. Manipulation of the magnetization states of the magnetic bits was achieved simply by applying different write current. Both memory writing and Boolean logic functions AND/NAND with large logic output ratio have been demonstrated experimentally.",

author = "Ziyao Lu and Chengyue Xiong and Hongming Mou and Zhaochu Luo and Wanjun Jiang and Xixiang Zhang and Zhang, {X. Z.}",

note = "KAUST Repository Item: Exported on 2021-02-04 Acknowledgements: This work was sponsored by National Key R&D Program of China (Grant No.: 2017YFA0206202) and National Science Foundation of China (Grant No.: 11674190).",

year = "2021",

doi = "10.1109/LMAG.2021.3056321",

language = "English (US)",

pages = "1--1",

journal = "IEEE Magnetics Letters",

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publisher = "Institute of Electrical and Electronics Engineers",

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T1 - Non-Volatile Magnetic Memory Combined with AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching

AU - Lu, Ziyao

AU - Xiong, Chengyue

AU - Mou, Hongming

AU - Luo, Zhaochu

AU - Jiang, Wanjun

AU - Zhang, Xixiang

AU - Zhang, X. Z.

N1 - KAUST Repository Item: Exported on 2021-02-04 Acknowledgements: This work was sponsored by National Key R&D Program of China (Grant No.: 2017YFA0206202) and National Science Foundation of China (Grant No.: 11674190).

PY - 2021

Y1 - 2021

N2 - Spin-orbit torque(SOT) has been widely used in data writing of spintronic memory devices by current-induced magnetization switching. The typical structure of SOT-induced magnetization switching of ferromagnetic multilayers with perpendicular magnetic anisotropy(PMA) such as Ta/CoFeB/MgO allowed the ferromagnetic and adjacent nonmagnetic layer to be patterned independently. Here, we studied the role of device geometry in the manipulation of magnetization switchingby placing two separated CoFeB magnetic bits at different locations on Ta layer with trapezoid shape. Manipulation of the magnetization states of the magnetic bits was achieved simply by applying different write current. Both memory writing and Boolean logic functions AND/NAND with large logic output ratio have been demonstrated experimentally.

AB - Spin-orbit torque(SOT) has been widely used in data writing of spintronic memory devices by current-induced magnetization switching. The typical structure of SOT-induced magnetization switching of ferromagnetic multilayers with perpendicular magnetic anisotropy(PMA) such as Ta/CoFeB/MgO allowed the ferromagnetic and adjacent nonmagnetic layer to be patterned independently. Here, we studied the role of device geometry in the manipulation of magnetization switchingby placing two separated CoFeB magnetic bits at different locations on Ta layer with trapezoid shape. Manipulation of the magnetization states of the magnetic bits was achieved simply by applying different write current. Both memory writing and Boolean logic functions AND/NAND with large logic output ratio have been demonstrated experimentally.

UR - http://hdl.handle.net/10754/667190

UR - https://ieeexplore.ieee.org/document/9345391/

U2 - 10.1109/LMAG.2021.3056321

DO - 10.1109/LMAG.2021.3056321

M3 - Article

SN - 1949-3088

SP - 1

EP - 1

JO - IEEE Magnetics Letters

JF - IEEE Magnetics Letters

ER -

Non-Volatile Magnetic Memory Combined with AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching

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