@inproceedings{16c6333bcb12442ea31568cc28d6b113,
title = "Nitrogen implantation induced intermixing in InAs/InAlGaAs/InP dots-in-well laser",
abstract = "Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quatum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5×1012 ions/cm 2, 1500 keV and annealing at 700°C. The intermixing activation is found to occur at a lower temperature than the typical dielectric cap annealing induced intermixing technique. The implantation induced a vacancy peaks at 1.5 μm above the active region. The point defects diffuse efficiently through the active region during subsequent annealing and induced quantum-dot intermixing with improved luminescence at a relatively low activation annealing temperature.",
author = "Djie, {Hery S.} and Yang Wang and Ooi, {Boon S.}",
year = "2006",
language = "English (US)",
isbn = "0780395581",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "270--273",
booktitle = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings",
note = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",
}