Abstract
We propose a new nitride photocatalyst of an n-n+-GaN structure to increase H2 gas generation. This structure consists of a thin lightly-doped n-type layer on a heavily-doped n+-type layer to realize an optimized depletion layer for optical absorption and highly conductive region, respectively. An optimized n-n+-GaN structure could generate much more H2 gas rather than a single n-GaN layer structure by about 1.4 times.
Original language | English (US) |
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Pages (from-to) | 2349-2351 |
Number of pages | 3 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 5 |
Issue number | 6 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |
Event | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: Sep 16 2007 → Sep 21 2007 |
ASJC Scopus subject areas
- Condensed Matter Physics