Nitride-based concentrator solar cells grown on Si substrates

C. Y. Liu; C. C. Lai; J. H. Liao; L. C. Cheng; H. H. Liu; C. C. Chang; G. Y. Lee; J. I. Chyi; L. K. Yeh; J. H. He; T. Y. Chung; L. C. Huang; K. Y. Lai

doi:10.1016/j.solmat.2013.05.017

Nitride-based concentrator solar cells grown on Si substrates

C. Y. Liu, C. C. Lai, J. H. Liao, L. C. Cheng, H. H. Liu, C. C. Chang, G. Y. Lee, J. I. Chyi, L. K. Yeh, J. H. He, T. Y. Chung, L. C. Huang, K. Y. Lai^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly Si_xN_y masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.

Original language	English (US)
Pages (from-to)	54-58
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	117
DOIs	https://doi.org/10.1016/j.solmat.2013.05.017
State	Published - 2013
Externally published	Yes

Keywords

Concentrator
GaN
InGaN
Si substrates

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2013.05.017

Cite this

@article{9c388cf4b43242d99ae2f7b4d43f07aa,

title = "Nitride-based concentrator solar cells grown on Si substrates",

abstract = "InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.",

keywords = "Concentrator, GaN, InGaN, Si substrates",

author = "Liu, {C. Y.} and Lai, {C. C.} and Liao, {J. H.} and Cheng, {L. C.} and Liu, {H. H.} and Chang, {C. C.} and Lee, {G. Y.} and Chyi, {J. I.} and Yeh, {L. K.} and He, {J. H.} and Chung, {T. Y.} and Huang, {L. C.} and Lai, {K. Y.}",

year = "2013",

doi = "10.1016/j.solmat.2013.05.017",

language = "English (US)",

volume = "117",

pages = "54--58",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Nitride-based concentrator solar cells grown on Si substrates

AU - Liu, C. Y.

AU - Lai, C. C.

AU - Liao, J. H.

AU - Cheng, L. C.

AU - Liu, H. H.

AU - Chang, C. C.

AU - Lee, G. Y.

AU - Chyi, J. I.

AU - Yeh, L. K.

AU - He, J. H.

AU - Chung, T. Y.

AU - Huang, L. C.

AU - Lai, K. Y.

PY - 2013

Y1 - 2013

N2 - InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.

AB - InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.

KW - Concentrator

KW - GaN

KW - InGaN

KW - Si substrates

UR - http://www.scopus.com/inward/record.url?scp=84878846003&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2013.05.017

DO - 10.1016/j.solmat.2013.05.017

M3 - Article

AN - SCOPUS:84878846003

SN - 0927-0248

VL - 117

SP - 54

EP - 58

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Nitride-based concentrator solar cells grown on Si substrates

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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