New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength

Yuanyuan Shi; Yanfeng Ji; Fei Hui; Montserrat Nafria; Marc Porti; Gennadi Bersuker; Mario Lanza

doi:10.1109/IPFA.2015.7224435

New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories, which are usually subjected to significant mechanical strains.

Original language	English (US)
Title of host publication	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	472-475
Number of pages	4
ISBN (Print)	9781479999286
DOIs	https://doi.org/10.1109/IPFA.2015.7224435
State	Published - Aug 25 2015
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

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10.1109/IPFA.2015.7224435

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Shi, Y., Ji, Y., Hui, F., Nafria, M., Porti, M., Bersuker, G., & Lanza, M. (2015). New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength. In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA (pp. 472-475). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224435

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author = "Yuanyuan Shi and Yanfeng Ji and Fei Hui and Montserrat Nafria and Marc Porti and Gennadi Bersuker and Mario Lanza",

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Shi, Y, Ji, Y, Hui, F, Nafria, M, Porti, M, Bersuker, G & Lanza, M 2015, New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength. in Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. Institute of Electrical and Electronics Engineers Inc., pp. 472-475. https://doi.org/10.1109/IPFA.2015.7224435

New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength. / Shi, Yuanyuan; Ji, Yanfeng; Hui, Fei et al.
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. Institute of Electrical and Electronics Engineers Inc., 2015. p. 472-475.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength

AU - Shi, Yuanyuan

AU - Ji, Yanfeng

AU - Hui, Fei

AU - Nafria, Montserrat

AU - Porti, Marc

AU - Bersuker, Gennadi

AU - Lanza, Mario

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2015/8/25

Y1 - 2015/8/25

N2 - In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories, which are usually subjected to significant mechanical strains.

AB - In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories, which are usually subjected to significant mechanical strains.

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DO - 10.1109/IPFA.2015.7224435

M3 - Conference contribution

SN - 9781479999286

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BT - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Shi Y, Ji Y, Hui F, Nafria M, Porti M, Bersuker G et al. New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength. In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. Institute of Electrical and Electronics Engineers Inc. 2015. p. 472-475 doi: 10.1109/IPFA.2015.7224435

New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength

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