Abstract
A new versatile negative-tone resist consisting of poly [4-hydroxystyrene-co-4-(3-furyl-3-hydroxypropyl)styrene], and a photoacid generator is described. This chemically amplified resist which shows high sensitivity in the deep-UV (2.3mJ/cm2) and E-Beam (3.4μC/cm2) modes, operates on the basis of radiation induced crosslinking via acid-catalyzed electrophilic aromatic substitution. Due to the incorporation of phenolic substituents in the resist design aqueous development without swelling is possible.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 67-74 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1466 |
| State | Published - 1991 |
| Externally published | Yes |
| Event | Proceedings of the Eighth Conference on Advances in Resist Technology and Processing VIII - San Jose, CA, USA Duration: Mar 4 1991 → Mar 5 1991 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Applied Mathematics
- Electrical and Electronic Engineering
- Computer Science Applications