Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices

R. A B Devine, H. P. Hjalmarson, Husam Niman Alshareef, M. Quevedo-Lopez

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Negative bias temperature instability and relaxation measurements have been performed on HfSiON gate stack devices. The time exponent for threshold voltage shift evolution is observed to be temperature dependent. The dominant source of the positive charge induced threshold voltage variation is determined to be dielectric trapped charge and this is the source of variation during relaxation. Nonlinear threshold voltage shift versus inversion channel carrier mobility is observed. Its magnitude is inconsistent with expectations from existing models.

Original languageEnglish (US)
Article number153512
JournalApplied Physics Letters
Issue number15
StatePublished - Apr 24 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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