Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices

R. A.B. Devine; H. P. Hjalmarson; H. N. Alshareef; M. Quevedo-Lopez

doi:10.1063/1.2912025

Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices

R. A.B. Devine, H. P. Hjalmarson, H. N. Alshareef, M. Quevedo-Lopez

Research output: Contribution to journal › Article › peer-review

Abstract

Negative bias temperature instability and relaxation measurements have been performed on HfSiON gate stack devices. The time exponent for threshold voltage shift evolution is observed to be temperature dependent. The dominant source of the positive charge induced threshold voltage variation is determined to be dielectric trapped charge and this is the source of variation during relaxation. Nonlinear threshold voltage shift versus inversion channel carrier mobility is observed. Its magnitude is inconsistent with expectations from existing models.

Original language	English (US)
Article number	153512
Journal	Applied Physics Letters
Volume	92
Issue number	15
DOIs	https://doi.org/10.1063/1.2912025
State	Published - 2008
Externally published	Yes

Bibliographical note

Funding Information:
This work was partially supported under Air Force Contract No. FA9553-C-0367 and by Sandia Laboratories. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed–Martin Company, for the Unites States Department of Energy’s National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2912025

Cite this

@article{07cae64fcfab4f2291b327931430da44,

title = "Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices",

abstract = "Negative bias temperature instability and relaxation measurements have been performed on HfSiON gate stack devices. The time exponent for threshold voltage shift evolution is observed to be temperature dependent. The dominant source of the positive charge induced threshold voltage variation is determined to be dielectric trapped charge and this is the source of variation during relaxation. Nonlinear threshold voltage shift versus inversion channel carrier mobility is observed. Its magnitude is inconsistent with expectations from existing models.",

author = "Devine, {R. A.B.} and Hjalmarson, {H. P.} and Alshareef, {H. N.} and M. Quevedo-Lopez",

note = "Funding Information: This work was partially supported under Air Force Contract No. FA9553-C-0367 and by Sandia Laboratories. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed–Martin Company, for the Unites States Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.",

year = "2008",

doi = "10.1063/1.2912025",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "15",

}

TY - JOUR

T1 - Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices

AU - Devine, R. A.B.

AU - Hjalmarson, H. P.

AU - Alshareef, H. N.

AU - Quevedo-Lopez, M.

N1 - Funding Information: This work was partially supported under Air Force Contract No. FA9553-C-0367 and by Sandia Laboratories. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed–Martin Company, for the Unites States Department of Energy’s National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

PY - 2008

Y1 - 2008

N2 - Negative bias temperature instability and relaxation measurements have been performed on HfSiON gate stack devices. The time exponent for threshold voltage shift evolution is observed to be temperature dependent. The dominant source of the positive charge induced threshold voltage variation is determined to be dielectric trapped charge and this is the source of variation during relaxation. Nonlinear threshold voltage shift versus inversion channel carrier mobility is observed. Its magnitude is inconsistent with expectations from existing models.

AB - Negative bias temperature instability and relaxation measurements have been performed on HfSiON gate stack devices. The time exponent for threshold voltage shift evolution is observed to be temperature dependent. The dominant source of the positive charge induced threshold voltage variation is determined to be dielectric trapped charge and this is the source of variation during relaxation. Nonlinear threshold voltage shift versus inversion channel carrier mobility is observed. Its magnitude is inconsistent with expectations from existing models.

UR - http://www.scopus.com/inward/record.url?scp=42349092982&partnerID=8YFLogxK

U2 - 10.1063/1.2912025

DO - 10.1063/1.2912025

M3 - Article

AN - SCOPUS:42349092982

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153512

ER -

Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this