We theoretically analyze two near-field thermal rectification devices: a radiative thermal diode and a thermal transistor that utilize a phase change material to achieve dynamic control over heat flow by exploiting metal-insulator transition of VO2 near 341 K. The thermal analogue of electronic diode allows high heat flow in one direction while it restricts the heat flow when the polarity of temperature gradient is reversed. We show that with the introduction of 1-D rectangular grating, thermal rectification is dramatically enhanced in the near-field due to reduced tunneling of surface waves across the interfaces for negative polarity. The radiative thermal transistor also works around phase transition temperature of VO2 and controls heat flow. We demonstrate a transistor-like behavior wherein heat flow across the source and the drain can be greatly varied by making a small change in gate temperature.
Bibliographical noteGenerated from Scopus record by KAUST IRTS on 2023-09-23
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics