Nature of doped a-Si:H/c-Si interface recombination

Stefaan De Wolf*, Michio Kondo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

199 Scopus citations


Doped hydrogenated amorphous silicon (a-Si:H) films of only a few nanometer thin find application in a-Si:H /crystalline silicon heterojunction solar cells. Although such films may yield a field effect at the interface, their electronic passivation properties are often found to be inferior, compared to those of their intrinsic counterparts. In this article, based on H2 effusion experiments, the authors argue that this phenomenon is caused by Fermi energy dependent Si-H bond rupture in the a-Si:H films, for either type of doping. This results in the creation of Si dangling bonds, counteracting intentional doping of the a-Si:H matrix, and lowering the passivation quality.

Original languageEnglish (US)
Article number103707
JournalJournal of Applied Physics
Issue number10
StatePublished - 2009
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported, respectively, by the New Energy and Industrial Technology Development Organization (NEDO), Japan, by the European Community’s Seventh Framework Programme [FP/2007–2013] under the Hetsi Project (Grant Agreement No. 211821), and by Axpo Holding AG, Switzerland, in the frame of the Axpo Naturstrom Fonds.

ASJC Scopus subject areas

  • General Physics and Astronomy


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