Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating

Jorge Alberto Holguin Lerma, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


We demonstrate narrow-line green laser emission at 513.85 nm with a linewidth of 31 pm and side-mode suppression ratio of 36.9 dB, operating under continuous-wave injection at room temperature. A high-order (40th) distributed-feedback surface grating fabricated on multimode InGaN-based green laser diodes via a focused ion beam produces resolution-limited, single-mode lasing with an optical power of 14 mW, lasing threshold of 7.27 kA cm−2, and maximum slope efficiency of 0.32 W A−1. Our realization of narrow-line green laser diodes opens a pathway toward efficient optical communications, sensing, and atomic clocks.
Original languageEnglish (US)
Pages (from-to)042007
JournalApplied Physics Express
Issue number4
StatePublished - Mar 27 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01, GEN/1/6607-01-01, REP/1/2878-01-01, KCR/1/2081-01-01
Acknowledgements: This work was supported by the King Abdullah University of Science and Technology (KAUST) funding BAS/1/1614-01-01, GEN/1/6607-01-01, REP/1/2878-01-01; KAUST equipment funding KCR/1/2081-01-01. Funding from the King Abdulaziz City for Science and Technology (KACST) Grant no. R2-FP-008, is gratefully acknowledged.


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