Narrow in-gap states in doped Al2O3

Montse Casas-Cabanas, Marion Frésard, Ulrike Lüders, Raymond Frésard, Cosima B. Schuster, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)29-31
Number of pages3
JournalChemical Physics Letters
Issue number1-3
StatePublished - Oct 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We thank S. Boudin for the help with the transmittance measurements, and W. Prellier for insightful discussions. M.C.C., M.F., U.L., and R.F. gratefully acknowledge the Region Basse-Normandie and the Ministere de la Recherche for financial support. C.S. thanks the Deutsche Forschungsgemeinschaft for financial support (TRR 80).

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


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