Narrow in-gap states in doped Al2O3

Montse Casas-Cabanas; Marion Frésard; Ulrike Lüders; Raymond Frésard; Cosima B. Schuster; Udo Schwingenschlögl

doi:10.1016/j.cplett.2011.09.001

Narrow in-gap states in doped Al2O3

Montse Casas-Cabanas, Marion Frésard, Ulrike Lüders, Raymond Frésard, Cosima B. Schuster, Udo Schwingenschlögl

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4 Scopus citations

Abstract

Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	29-31
Number of pages	3
Journal	Chemical Physics Letters
Volume	515
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2011.09.001
State	Published - Oct 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We thank S. Boudin for the help with the transmittance measurements, and W. Prellier for insightful discussions. M.C.C., M.F., U.L., and R.F. gratefully acknowledge the Region Basse-Normandie and the Ministere de la Recherche for financial support. C.S. thanks the Deutsche Forschungsgemeinschaft for financial support (TRR 80).

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2011.09.001

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title = "Narrow in-gap states in doped Al2O3",

abstract = "Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. {\textcopyright} 2011 Elsevier B.V. All rights reserved.",

author = "Montse Casas-Cabanas and Marion Fr{\'e}sard and Ulrike L{\"u}ders and Raymond Fr{\'e}sard and Schuster, {Cosima B.} and Udo Schwingenschl{\"o}gl",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank S. Boudin for the help with the transmittance measurements, and W. Prellier for insightful discussions. M.C.C., M.F., U.L., and R.F. gratefully acknowledge the Region Basse-Normandie and the Ministere de la Recherche for financial support. C.S. thanks the Deutsche Forschungsgemeinschaft for financial support (TRR 80).",

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AU - Casas-Cabanas, Montse

AU - Frésard, Marion

AU - Lüders, Ulrike

AU - Frésard, Raymond

AU - Schuster, Cosima B.

AU - Schwingenschlögl, Udo

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank S. Boudin for the help with the transmittance measurements, and W. Prellier for insightful discussions. M.C.C., M.F., U.L., and R.F. gratefully acknowledge the Region Basse-Normandie and the Ministere de la Recherche for financial support. C.S. thanks the Deutsche Forschungsgemeinschaft for financial support (TRR 80).

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N2 - Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.

AB - Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.

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DO - 10.1016/j.cplett.2011.09.001

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SP - 29

EP - 31

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-3

ER -

Narrow in-gap states in doped Al2O3

Abstract

Bibliographical note

ASJC Scopus subject areas

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