Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging

J. Li*, D. Anjum, R. Hull, G. Xia, J. L. Hoyt

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Fingerprint

Dive into the research topics of 'Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging'. Together they form a unique fingerprint.

Engineering

Material Science

Keyphrases