We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching is consistent with the conducting filament formation/rupture mechanism, and the switching power is as low as 10-9 W. We find that only about half of devices are switchable, and the Monte Carlo simulation suggests strong correlations between the switching reliability, the electrode size, and the filament dimension and density.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Sep 27 2010|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)