Nanoscale resistive switching and filamentary conduction in NiO thin films

J. Y. Ye, Y. Q. Li, J. Gao, H. Y. Peng, S. X. Wu, T. Wu

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching is consistent with the conducting filament formation/rupture mechanism, and the switching power is as low as 10-9 W. We find that only about half of devices are switchable, and the Monte Carlo simulation suggests strong correlations between the switching reliability, the electrode size, and the filament dimension and density.

Original languageEnglish (US)
Article number132108
JournalApplied Physics Letters
Issue number13
StatePublished - Sep 27 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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