Nanoscale resistive switching and filamentary conduction in NiO thin films

J. Y. Ye; Y. Q. Li; J. Gao; H. Y. Peng; S. X. Wu; T. Wu

doi:10.1063/1.3494267

Nanoscale resistive switching and filamentary conduction in NiO thin films

J. Y. Ye, Y. Q. Li, J. Gao, H. Y. Peng, S. X. Wu, T. Wu

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38 Scopus citations

Abstract

We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching is consistent with the conducting filament formation/rupture mechanism, and the switching power is as low as 10^-9 W. We find that only about half of devices are switchable, and the Monte Carlo simulation suggests strong correlations between the switching reliability, the electrode size, and the filament dimension and density.

Original language	English (US)
Article number	132108
Journal	Applied Physics Letters
Volume	97
Issue number	13
DOIs	https://doi.org/10.1063/1.3494267
State	Published - Sep 27 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching is consistent with the conducting filament formation/rupture mechanism, and the switching power is as low as 10-9 W. We find that only about half of devices are switchable, and the Monte Carlo simulation suggests strong correlations between the switching reliability, the electrode size, and the filament dimension and density.",

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AU - Li, Y. Q.

AU - Gao, J.

AU - Peng, H. Y.

AU - Wu, S. X.

AU - Wu, T.

PY - 2010/9/27

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N2 - We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching is consistent with the conducting filament formation/rupture mechanism, and the switching power is as low as 10-9 W. We find that only about half of devices are switchable, and the Monte Carlo simulation suggests strong correlations between the switching reliability, the electrode size, and the filament dimension and density.

AB - We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching is consistent with the conducting filament formation/rupture mechanism, and the switching power is as low as 10-9 W. We find that only about half of devices are switchable, and the Monte Carlo simulation suggests strong correlations between the switching reliability, the electrode size, and the filament dimension and density.

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Nanoscale resistive switching and filamentary conduction in NiO thin films

Abstract

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